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	Stability and Electronic Properties of Hydrogenated MoS2 Mono layer: A First-Principles Study
	Zhang, Weibin[1]; Zhang, Zhijun[2]; Yang, Woochul[3]
刊名	JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
	2015
卷号	15页码:8075-8080
关键词	MoS2 Monolayer Hydrogenation First-Principles Calculation Electronic Structure Work Function
ISSN号	1533-4880
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2266256
专题	上海大学
作者单位	1.[1]Dongguk Univ, Dept Phys, Seoul 100715, South Korea. 2.[2]Dongguk Univ, Dept Phys, Seoul 100715, South Korea. 3.Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China. 4.[3]Dongguk Univ, Dept Phys, Seoul 100715, South Korea.
推荐引用方式 GB/T 7714	Zhang, Weibin[1],Zhang, Zhijun[2],Yang, Woochul[3]. Stability and Electronic Properties of Hydrogenated MoS2 Mono layer: A First-Principles Study[J]. JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,2015,15:8075-8080.
APA	Zhang, Weibin[1],Zhang, Zhijun[2],&Yang, Woochul[3].(2015).Stability and Electronic Properties of Hydrogenated MoS2 Mono layer: A First-Principles Study.JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY,15,8075-8080.
MLA	Zhang, Weibin[1],et al."Stability and Electronic Properties of Hydrogenated MoS2 Mono layer: A First-Principles Study".JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 15(2015):8075-8080.

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