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	Solution-Processed Low-Operating-Voltage Thin-Film Transistors With Bottom-Gate Top-Contact Structure
	Li, Xifeng[1]; Zhu, Leyong[2]; Gao, Yana[3]; Zhang, Jianhua[4]
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2015
卷号	62页码:875-881
关键词	Bottom gate top contact (BGTC) hafnium aluminum oxide (HAO) low voltage solution process thin-film transistors (TFTs) zinc indium tin oxide (ZITO)
ISSN号	0018-9383
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2236966
专题	上海大学
作者单位	1.[1]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 2.[2]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 3.[3]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 4.[4]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Li, Xifeng[1],Zhu, Leyong[2],Gao, Yana[3],et al. Solution-Processed Low-Operating-Voltage Thin-Film Transistors With Bottom-Gate Top-Contact Structure[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2015,62:875-881.
APA	Li, Xifeng[1],Zhu, Leyong[2],Gao, Yana[3],&Zhang, Jianhua[4].(2015).Solution-Processed Low-Operating-Voltage Thin-Film Transistors With Bottom-Gate Top-Contact Structure.IEEE TRANSACTIONS ON ELECTRON DEVICES,62,875-881.
MLA	Li, Xifeng[1],et al."Solution-Processed Low-Operating-Voltage Thin-Film Transistors With Bottom-Gate Top-Contact Structure".IEEE TRANSACTIONS ON ELECTRON DEVICES 62(2015):875-881.

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