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	Nonvolatile resistive switching in Co doped amorphous carbon film
	Zhang, Shuwei[1]; Zhou, Jiawei[2]; Zhang, Dian[3]; Ren, Bing[4]; Wang, Lin[5]; Huang, Jian[6]; Wang, Linjun[7]
刊名	VACUUM
	2016
卷号	125页码:189-191
关键词	Resistive random access memory Co-doped amorphous carbon film Direct current magnetron sputtering
ISSN号	0042-207X
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2235763
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 2.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 3.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 4.[4]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 5.[5]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 6.[6]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 7.[7]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China.
推荐引用方式 GB/T 7714	Zhang, Shuwei[1],Zhou, Jiawei[2],Zhang, Dian[3],et al. Nonvolatile resistive switching in Co doped amorphous carbon film[J]. VACUUM,2016,125:189-191.
APA	Zhang, Shuwei[1].,Zhou, Jiawei[2].,Zhang, Dian[3].,Ren, Bing[4].,Wang, Lin[5].,...&Wang, Linjun[7].(2016).Nonvolatile resistive switching in Co doped amorphous carbon film.VACUUM,125,189-191.
MLA	Zhang, Shuwei[1],et al."Nonvolatile resistive switching in Co doped amorphous carbon film".VACUUM 125(2016):189-191.

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