Significant Roles of Intrinsic Point Defects in Mg2X (X = Si, Ge, Sn) Thermoelectric Materials | |
Liu, Xiaohua[1]; Xi, Lili[2]; Qiu, Wujie[3]; Yang, Jiong[4]; Zhu, Tiejun[5]; Zhao, Xinbing[6]; Zhang, Wenqing[7] | |
刊名 | ADVANCED ELECTRONIC MATERIALS
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2016 | |
卷号 | 2 |
ISSN号 | 2199-160X |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2235690 |
专题 | 上海大学 |
作者单位 | 1.[1]Zhejiang Univ, State Key Lab Silicon Mat, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China. 2.[2]Chinese Acad Sci, State Key Lab High Performance Ceram & Superfi Mi, Shanghai Inst Ceram, Shanghai 200050, Peoples R China. 3.[3]Chinese Acad Sci, State Key Lab High Performance Ceram & Superfi Mi, Shanghai Inst Ceram, Shanghai 200050, Peoples R China. 4.[4]Shanghai Univ, Mat Genome Inst, Shanghai 200444, Peoples R China. 5.[5]Zhejiang Univ, State Key Lab Silicon Mat, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China. 6.[6]Zhejiang Univ, State Key Lab Silicon Mat, Sch Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China. 7.[7]Chinese Acad Sci, State Key Lab High Performance Ceram & Superfi Mi, Shanghai Inst Ceram, Shanghai 200050, Peoples R China. 8.Shanghai Univ, Mat Genome Inst, Shanghai 200444, Peoples R China. |
推荐引用方式 GB/T 7714 | Liu, Xiaohua[1],Xi, Lili[2],Qiu, Wujie[3],et al. Significant Roles of Intrinsic Point Defects in Mg2X (X = Si, Ge, Sn) Thermoelectric Materials[J]. ADVANCED ELECTRONIC MATERIALS,2016,2. |
APA | Liu, Xiaohua[1].,Xi, Lili[2].,Qiu, Wujie[3].,Yang, Jiong[4].,Zhu, Tiejun[5].,...&Zhang, Wenqing[7].(2016).Significant Roles of Intrinsic Point Defects in Mg2X (X = Si, Ge, Sn) Thermoelectric Materials.ADVANCED ELECTRONIC MATERIALS,2. |
MLA | Liu, Xiaohua[1],et al."Significant Roles of Intrinsic Point Defects in Mg2X (X = Si, Ge, Sn) Thermoelectric Materials".ADVANCED ELECTRONIC MATERIALS 2(2016). |
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