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	Auger recombination at low temperatures in InGaAs/InAlAs quantum well probed by photoluminescence
	Zhu, Liang[1]; Song, Yuxin[2]; Qi, Zhen[3]; Wang, Shumin[4]; Zhu, Liangqing[5]; Chen, Xiren[6]; Zha, Fangxing[7]; Guo, Shaoling[8]; Shao, Jun[9]
刊名	JOURNAL OF LUMINESCENCE
	2016
卷号	169页码:132-136
关键词	Quantum well Strong localization Photoluminescence Auger recombination
ISSN号	0022-2313
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2235311
专题	上海大学
作者单位	1.[1]Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China. 2.E China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200062, Peoples R China. 3.[2]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. 4.[3]Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China. 5.[4]Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China. 6.[5]E China Normal Univ, Key Lab Polar Mat & Devices, Minist Educ, Shanghai 200062, Peoples R China. 7.[6]Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China. 8.[7]Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China. 9.[8]Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China. 10.[9]Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China.
推荐引用方式 GB/T 7714	Zhu, Liang[1],Song, Yuxin[2],Qi, Zhen[3],et al. Auger recombination at low temperatures in InGaAs/InAlAs quantum well probed by photoluminescence[J]. JOURNAL OF LUMINESCENCE,2016,169:132-136.
APA	Zhu, Liang[1].,Song, Yuxin[2].,Qi, Zhen[3].,Wang, Shumin[4].,Zhu, Liangqing[5].,...&Shao, Jun[9].(2016).Auger recombination at low temperatures in InGaAs/InAlAs quantum well probed by photoluminescence.JOURNAL OF LUMINESCENCE,169,132-136.
MLA	Zhu, Liang[1],et al."Auger recombination at low temperatures in InGaAs/InAlAs quantum well probed by photoluminescence".JOURNAL OF LUMINESCENCE 169(2016):132-136.

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