The influence of post treatment on physical properties of polycrystalline CuInS2 thin films | |
Shen, Jiesheng[1]; Liu, Xingzuo[2]; Zhao, Yue[3]; Cao, Meng[4]; Liang, Xiaoyan[5]; Min, Jiahua[6]; Wang, Linjun[7]; Shi, Weimin[8] | |
刊名 | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
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2016 | |
卷号 | 50页码:49-54 |
关键词 | CuInS2 film Heat-treatment BM treatment Argon plasma etching |
ISSN号 | 1369-8001 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2233397 |
专题 | 上海大学 |
作者单位 | 1.[1]Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China. 2.[2]Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China. 3.[3]Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China. 4.[4]Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China. 5.[5]Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China. 6.[6]Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China. 7.[7]Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China. 8.[8]Shanghai Univ, Shanghai Leading Acad Disciplines, Dept Elect Informat Mat, Shanghai 200072, Peoples R China. |
推荐引用方式 GB/T 7714 | Shen, Jiesheng[1],Liu, Xingzuo[2],Zhao, Yue[3],et al. The influence of post treatment on physical properties of polycrystalline CuInS2 thin films[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2016,50:49-54. |
APA | Shen, Jiesheng[1].,Liu, Xingzuo[2].,Zhao, Yue[3].,Cao, Meng[4].,Liang, Xiaoyan[5].,...&Shi, Weimin[8].(2016).The influence of post treatment on physical properties of polycrystalline CuInS2 thin films.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,50,49-54. |
MLA | Shen, Jiesheng[1],et al."The influence of post treatment on physical properties of polycrystalline CuInS2 thin films".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 50(2016):49-54. |
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