Fabrication and characterization of p-CuS/n-GaN thin film heterojunction diodes | |
Li, Lunjuan[1]; Huang, Jian[2]; Yang, Weichuan[3]; Tang, Ke[4]; Ren, Bing[5]; Xu, Haitao[6]; Wang, Linjun[7] | |
刊名 | 10th Asian-European International Conference on Plasma Surface Engineering (AEPSE)
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2016 | |
卷号 | 307页码:1024-1028 |
关键词 | CuS GaN Heterojunction Magnetron sputtering |
ISSN号 | 0257-8972 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2227114 |
专题 | 上海大学 |
作者单位 | 1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 2.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 3.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 4.[4]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 5.[5]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 6.[6]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 7.[7]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. |
推荐引用方式 GB/T 7714 | Li, Lunjuan[1],Huang, Jian[2],Yang, Weichuan[3],et al. Fabrication and characterization of p-CuS/n-GaN thin film heterojunction diodes[J]. 10th Asian-European International Conference on Plasma Surface Engineering (AEPSE),2016,307:1024-1028. |
APA | Li, Lunjuan[1].,Huang, Jian[2].,Yang, Weichuan[3].,Tang, Ke[4].,Ren, Bing[5].,...&Wang, Linjun[7].(2016).Fabrication and characterization of p-CuS/n-GaN thin film heterojunction diodes.10th Asian-European International Conference on Plasma Surface Engineering (AEPSE),307,1024-1028. |
MLA | Li, Lunjuan[1],et al."Fabrication and characterization of p-CuS/n-GaN thin film heterojunction diodes".10th Asian-European International Conference on Plasma Surface Engineering (AEPSE) 307(2016):1024-1028. |
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