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	Suppression in the Negative Bias Illumination Instability of ZnSnO Thin-Film Transistors Using Hafnium Doping by Dual-Target Magnetron Cosputtering System
	Huang, Chuan-Xin[1]; Li, Jun[2]; Fu, Yi-Zhou[3]; Zhang, Jian-Hua[4]; Jiang, Xue-Yin[5]; Zhang, Zhi-Lin[6]
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2016
卷号	63页码:3552-3557
关键词	Hf doping negative bias illumination stress(NBIS) stability oxygen vacancy thin film transistors trap density
ISSN号	0018-9383
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2225144
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 2.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 3.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 4.[4]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 5.[5]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 6.[6]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 7.Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Huang, Chuan-Xin[1],Li, Jun[2],Fu, Yi-Zhou[3],et al. Suppression in the Negative Bias Illumination Instability of ZnSnO Thin-Film Transistors Using Hafnium Doping by Dual-Target Magnetron Cosputtering System[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2016,63:3552-3557.
APA	Huang, Chuan-Xin[1],Li, Jun[2],Fu, Yi-Zhou[3],Zhang, Jian-Hua[4],Jiang, Xue-Yin[5],&Zhang, Zhi-Lin[6].(2016).Suppression in the Negative Bias Illumination Instability of ZnSnO Thin-Film Transistors Using Hafnium Doping by Dual-Target Magnetron Cosputtering System.IEEE TRANSACTIONS ON ELECTRON DEVICES,63,3552-3557.
MLA	Huang, Chuan-Xin[1],et al."Suppression in the Negative Bias Illumination Instability of ZnSnO Thin-Film Transistors Using Hafnium Doping by Dual-Target Magnetron Cosputtering System".IEEE TRANSACTIONS ON ELECTRON DEVICES 63(2016):3552-3557.

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