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	Improved Negative Bias Illumination Stability and Thermal Stability of HfZnSnO/ZnSnO Thin-Film Transistor Using Double-Channel Structure by Cosputtering
	Huang, Chuan-Xin[1]; Li, Jun[2]; Zhao, Cheng-Yu[3]; Fu, Yi-Zhou[4]; Zhang, Jian-Hua[5]; Jiang, Xue-Yin[6]; Zhang, Zhi-Lin[7]
刊名	IEEE TRANSACTIONS ON ELECTRON DEVICES
	2016
卷号	63页码:4320-4325
关键词	Density of states (DOS) double-channel structure Hf doping negative bias illumination stress (NBIS) stability temperature stress (TS) stability thin-film transistors (TFTs)
ISSN号	0018-9383
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2225139
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 2.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 3.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 4.[4]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 5.[5]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 6.[6]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 7.[7]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 8.Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Huang, Chuan-Xin[1],Li, Jun[2],Zhao, Cheng-Yu[3],et al. Improved Negative Bias Illumination Stability and Thermal Stability of HfZnSnO/ZnSnO Thin-Film Transistor Using Double-Channel Structure by Cosputtering[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2016,63:4320-4325.
APA	Huang, Chuan-Xin[1].,Li, Jun[2].,Zhao, Cheng-Yu[3].,Fu, Yi-Zhou[4].,Zhang, Jian-Hua[5].,...&Zhang, Zhi-Lin[7].(2016).Improved Negative Bias Illumination Stability and Thermal Stability of HfZnSnO/ZnSnO Thin-Film Transistor Using Double-Channel Structure by Cosputtering.IEEE TRANSACTIONS ON ELECTRON DEVICES,63,4320-4325.
MLA	Huang, Chuan-Xin[1],et al."Improved Negative Bias Illumination Stability and Thermal Stability of HfZnSnO/ZnSnO Thin-Film Transistor Using Double-Channel Structure by Cosputtering".IEEE TRANSACTIONS ON ELECTRON DEVICES 63(2016):4320-4325.

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