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	Feasibility of ZnO:Al/Ag/ZnO:Al multilayer source/drain electrode to achieve fully transparent HfInZnO thin film transistor
	Li, Jun[1]; Zhang, Jian-Hua[2]; Jiang, Xue-Yin[3]; Zhang, Zhi-Lin[4]
刊名	THIN SOLID FILMS
	2016
卷号	605页码:263-266
关键词	Hafnium indium zinc oxide Transistor Multilayer Silver Aluminum-doped zinc oxide Sputtering
ISSN号	0040-6090
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2225118
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 2.Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 3.[2]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 4.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 5.[4]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 6.Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Li, Jun[1],Zhang, Jian-Hua[2],Jiang, Xue-Yin[3],et al. Feasibility of ZnO:Al/Ag/ZnO:Al multilayer source/drain electrode to achieve fully transparent HfInZnO thin film transistor[J]. THIN SOLID FILMS,2016,605:263-266.
APA	Li, Jun[1],Zhang, Jian-Hua[2],Jiang, Xue-Yin[3],&Zhang, Zhi-Lin[4].(2016).Feasibility of ZnO:Al/Ag/ZnO:Al multilayer source/drain electrode to achieve fully transparent HfInZnO thin film transistor.THIN SOLID FILMS,605,263-266.
MLA	Li, Jun[1],et al."Feasibility of ZnO:Al/Ag/ZnO:Al multilayer source/drain electrode to achieve fully transparent HfInZnO thin film transistor".THIN SOLID FILMS 605(2016):263-266.

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