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	Nitrogen anion doping as a strategy to suppress negative gate-bias illumination instability of ZnSnO thin film transistor
	Li, Jun[1]; Fu, Yi-Zhou[2]; Huang, Chuan-Xin[3]; Zhang, Jian-Hua[4]; Jiang, Xue-Yin[5]; Zhang, Zhi-Lin[6]
刊名	APPLIED PHYSICS LETTERS
	2016
卷号	108
ISSN号	0003-6951
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2225116
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 2.Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 3.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 4.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 5.[4]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China. 6.[5]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 7.[6]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201800, Peoples R China. 8.Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China.
推荐引用方式 GB/T 7714	Li, Jun[1],Fu, Yi-Zhou[2],Huang, Chuan-Xin[3],et al. Nitrogen anion doping as a strategy to suppress negative gate-bias illumination instability of ZnSnO thin film transistor[J]. APPLIED PHYSICS LETTERS,2016,108.
APA	Li, Jun[1],Fu, Yi-Zhou[2],Huang, Chuan-Xin[3],Zhang, Jian-Hua[4],Jiang, Xue-Yin[5],&Zhang, Zhi-Lin[6].(2016).Nitrogen anion doping as a strategy to suppress negative gate-bias illumination instability of ZnSnO thin film transistor.APPLIED PHYSICS LETTERS,108.
MLA	Li, Jun[1],et al."Nitrogen anion doping as a strategy to suppress negative gate-bias illumination instability of ZnSnO thin film transistor".APPLIED PHYSICS LETTERS 108(2016).

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