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	Fabrication of CuInS2-sensitized solar cells via an improved SILAR process and its interface electron recombination (EI收录)
	Xu, Xueqing[1,2]; Wan, Qingcui[1,2]; Luan, Chunyan[3]; Mei, Fengjiao[1]; Zhao, Qian[1,2]; An, Ping[1,2]; Liang, Zhurong[1,2]; Xu, Gang[1,2]; Zapien, Juan Antonio[3]
刊名	ACS Applied Materials and Interfaces
	2013
卷号	5页码:10605-10613
关键词	Copper Defects Deposition Electrolytes Electrons Fabrication Indium Point defects Solar cells Titanium dioxide X ray diffraction
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2222502
专题	华南理工大学
作者单位	1.[1] CAS Key Laboratory of Renewable Energy, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510640, China 2.[2] University of Chinese Academy of Sciences, Beijing 100049, China 3.[3] Department of Physics and Materials Science, Centre for Functional Photonics, City University of Hong Kong, New Kowloon, Hong Kong
推荐引用方式 GB/T 7714	Xu, Xueqing[1,2],Wan, Qingcui[1,2],Luan, Chunyan[3],等. Fabrication of CuInS2-sensitized solar cells via an improved SILAR process and its interface electron recombination (EI收录)[J]. ACS Applied Materials and Interfaces,2013,5:10605-10613.
APA	Xu, Xueqing[1,2].,Wan, Qingcui[1,2].,Luan, Chunyan[3].,Mei, Fengjiao[1].,Zhao, Qian[1,2].,...&Zapien, Juan Antonio[3].(2013).Fabrication of CuInS2-sensitized solar cells via an improved SILAR process and its interface electron recombination (EI收录).ACS Applied Materials and Interfaces,5,10605-10613.
MLA	Xu, Xueqing[1,2],et al."Fabrication of CuInS2-sensitized solar cells via an improved SILAR process and its interface electron recombination (EI收录)".ACS Applied Materials and Interfaces 5(2013):10605-10613.

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