InGaZnO Thin-Film Transistors Modified by Self-Assembled Monolayer with Different Alkyl Chain Length (EI收录) | |
Xiao, Peng[1]; Lan, Linfeng[1]; Dong, Ting[1]; Lin, Zhenguo[1]; Sun, Sheng[1]; Song, Wei[1]; Peng, Junbiao[1] | |
刊名 | IEEE Electron Device Letters
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2015 | |
卷号 | 36页码:687-689 |
关键词 | Chain length Monolayers Organic polymers Self assembled monolayers Sol gels Thin films |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2212201 |
专题 | 华南理工大学 |
作者单位 | [1] State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China |
推荐引用方式 GB/T 7714 | Xiao, Peng[1],Lan, Linfeng[1],Dong, Ting[1],等. InGaZnO Thin-Film Transistors Modified by Self-Assembled Monolayer with Different Alkyl Chain Length (EI收录)[J]. IEEE Electron Device Letters,2015,36:687-689. |
APA | Xiao, Peng[1].,Lan, Linfeng[1].,Dong, Ting[1].,Lin, Zhenguo[1].,Sun, Sheng[1].,...&Peng, Junbiao[1].(2015).InGaZnO Thin-Film Transistors Modified by Self-Assembled Monolayer with Different Alkyl Chain Length (EI收录).IEEE Electron Device Letters,36,687-689. |
MLA | Xiao, Peng[1],et al."InGaZnO Thin-Film Transistors Modified by Self-Assembled Monolayer with Different Alkyl Chain Length (EI收录)".IEEE Electron Device Letters 36(2015):687-689. |
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