QQ客服 官方微博 反馈留言

	InGaZnO Thin-Film Transistors Modified by Self-Assembled Monolayer with Different Alkyl Chain Length (EI收录)
	Xiao, Peng[1]; Lan, Linfeng[1]; Dong, Ting[1]; Lin, Zhenguo[1]; Sun, Sheng[1]; Song, Wei[1]; Peng, Junbiao[1]
刊名	IEEE Electron Device Letters
	2015
卷号	36页码:687-689
关键词	Chain length Monolayers Organic polymers Self assembled monolayers Sol gels Thin films
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2212201
专题	华南理工大学
作者单位	[1] State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China
推荐引用方式 GB/T 7714	Xiao, Peng[1],Lan, Linfeng[1],Dong, Ting[1],等. InGaZnO Thin-Film Transistors Modified by Self-Assembled Monolayer with Different Alkyl Chain Length (EI收录)[J]. IEEE Electron Device Letters,2015,36:687-689.
APA	Xiao, Peng[1].,Lan, Linfeng[1].,Dong, Ting[1].,Lin, Zhenguo[1].,Sun, Sheng[1].,...&Peng, Junbiao[1].(2015).InGaZnO Thin-Film Transistors Modified by Self-Assembled Monolayer with Different Alkyl Chain Length (EI收录).IEEE Electron Device Letters,36,687-689.
MLA	Xiao, Peng[1],et al."InGaZnO Thin-Film Transistors Modified by Self-Assembled Monolayer with Different Alkyl Chain Length (EI收录)".IEEE Electron Device Letters 36(2015):687-689.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。