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	A quasi-two-dimensional threshold voltage model for fully depleted SOI LDMOS
	Chen, JN [ 1 ]; By:Wu, XL [ 1 ]; Ke, DM [ 1 ] Book Group Author:IEEE
刊名	2008 International Conference on Wireless Communications, Networking and Mobile Computing, WiCOM 2008
	2008
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2205477
专题	安徽大学
作者单位	Anhui Univ, Inst Elect Sci & Technol, Hefei 230039, Anhui, Peoples R China Organization-Enhanced Name Anhui University
推荐引用方式 GB/T 7714	Chen, JN [ 1 ],By:Wu, XL [ 1 ],Ke, DM [ 1 ] Book Group Author:IEEE. A quasi-two-dimensional threshold voltage model for fully depleted SOI LDMOS[J]. 2008 International Conference on Wireless Communications, Networking and Mobile Computing, WiCOM 2008,2008.
APA	Chen, JN [ 1 ],By:Wu, XL [ 1 ],&Ke, DM [ 1 ] Book Group Author:IEEE.(2008).A quasi-two-dimensional threshold voltage model for fully depleted SOI LDMOS.2008 International Conference on Wireless Communications, Networking and Mobile Computing, WiCOM 2008.
MLA	Chen, JN [ 1 ],et al."A quasi-two-dimensional threshold voltage model for fully depleted SOI LDMOS".2008 International Conference on Wireless Communications, Networking and Mobile Computing, WiCOM 2008 (2008).

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