A quasi-two-dimensional threshold voltage model for fully depleted SOI LDMOS | |
Chen, JN [ 1 ]; By:Wu, XL [ 1 ]; Ke, DM [ 1 ] Book Group Author:IEEE | |
刊名 | 2008 International Conference on Wireless Communications, Networking and Mobile Computing, WiCOM 2008
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2008 | |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2205477 |
专题 | 安徽大学 |
作者单位 | Anhui Univ, Inst Elect Sci & Technol, Hefei 230039, Anhui, Peoples R China Organization-Enhanced Name Anhui University |
推荐引用方式 GB/T 7714 | Chen, JN [ 1 ],By:Wu, XL [ 1 ],Ke, DM [ 1 ] Book Group Author:IEEE. A quasi-two-dimensional threshold voltage model for fully depleted SOI LDMOS[J]. 2008 International Conference on Wireless Communications, Networking and Mobile Computing, WiCOM 2008,2008. |
APA | Chen, JN [ 1 ],By:Wu, XL [ 1 ],&Ke, DM [ 1 ] Book Group Author:IEEE.(2008).A quasi-two-dimensional threshold voltage model for fully depleted SOI LDMOS.2008 International Conference on Wireless Communications, Networking and Mobile Computing, WiCOM 2008. |
MLA | Chen, JN [ 1 ],et al."A quasi-two-dimensional threshold voltage model for fully depleted SOI LDMOS".2008 International Conference on Wireless Communications, Networking and Mobile Computing, WiCOM 2008 (2008). |
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