Study on the features of interstitial oxygen defects in HfO2 using first-principles calculations | |
Chen,Jun-Ning; Luo,Jing; Yang,Jin; Dai,Guang-Zhen; Liu,Qi; Wang,Jia-Yu; Dai,Yue-Hua; Jiang,Xian-Wei | |
刊名 | Gongneng Cailiao/Journal of Functional Materials
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2014 | |
卷号 | Vol.45 No.15页码:15023-15026,15030 |
ISSN号 | 1001-9731 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2200948 |
专题 | 安徽大学 |
作者单位 | 1.3Laboratory of Nano-Fabrication and Novel Device Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China 2.School of Electronics and Information Engineering,Anhui University, Hefei, China 3.2School of Electrical Engineering, Anhui Polytechnic University, Wuhu, China |
推荐引用方式 GB/T 7714 | Chen,Jun-Ning,Luo,Jing,Yang,Jin,et al. Study on the features of interstitial oxygen defects in HfO2 using first-principles calculations[J]. Gongneng Cailiao/Journal of Functional Materials,2014,Vol.45 No.15:15023-15026,15030. |
APA | Chen,Jun-Ning.,Luo,Jing.,Yang,Jin.,Dai,Guang-Zhen.,Liu,Qi.,...&Jiang,Xian-Wei.(2014).Study on the features of interstitial oxygen defects in HfO2 using first-principles calculations.Gongneng Cailiao/Journal of Functional Materials,Vol.45 No.15,15023-15026,15030. |
MLA | Chen,Jun-Ning,et al."Study on the features of interstitial oxygen defects in HfO2 using first-principles calculations".Gongneng Cailiao/Journal of Functional Materials Vol.45 No.15(2014):15023-15026,15030. |
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