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	Study on the features of interstitial oxygen defects in HfO2 using first-principles calculations
	Chen,Jun-Ning; Luo,Jing; Yang,Jin; Dai,Guang-Zhen; Liu,Qi; Wang,Jia-Yu; Dai,Yue-Hua; Jiang,Xian-Wei
刊名	Gongneng Cailiao/Journal of Functional Materials
	2014
卷号	Vol.45 No.15页码:15023-15026,15030
ISSN号	1001-9731
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2200948
专题	安徽大学
作者单位	1.3Laboratory of Nano-Fabrication and Novel Device Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China 2.School of Electronics and Information Engineering,Anhui University, Hefei, China 3.2School of Electrical Engineering, Anhui Polytechnic University, Wuhu, China
推荐引用方式 GB/T 7714	Chen,Jun-Ning,Luo,Jing,Yang,Jin,et al. Study on the features of interstitial oxygen defects in HfO2 using first-principles calculations[J]. Gongneng Cailiao/Journal of Functional Materials,2014,Vol.45 No.15:15023-15026,15030.
APA	Chen,Jun-Ning.,Luo,Jing.,Yang,Jin.,Dai,Guang-Zhen.,Liu,Qi.,...&Jiang,Xian-Wei.(2014).Study on the features of interstitial oxygen defects in HfO2 using first-principles calculations.Gongneng Cailiao/Journal of Functional Materials,Vol.45 No.15,15023-15026,15030.
MLA	Chen,Jun-Ning,et al."Study on the features of interstitial oxygen defects in HfO2 using first-principles calculations".Gongneng Cailiao/Journal of Functional Materials Vol.45 No.15(2014):15023-15026,15030.

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