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	Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy
	Liu,Yanmei; Sun,Zhaoqi; Jiang,Shanshan; Li,Jing; Liu,Mao; He,Huaxin; He,Gang; Li,Wendong; Zheng,Changyong
刊名	Journal of Alloys and Compounds
	2017
卷号	Vol.716页码:1-6
关键词	ATOMIC-LAYER-DEPOSITION DIELECTRICS AL2O3 HFO2
ISSN号	0925-8388
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2199290
专题	安徽大学
作者单位	1.Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Peoples R China 2.Chinese Acad Sci, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanostruct, Inst Solid State Phys, Hefei 230031, Peoples R China
推荐引用方式 GB/T 7714	Liu,Yanmei,Sun,Zhaoqi,Jiang,Shanshan,et al. Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy[J]. Journal of Alloys and Compounds,2017,Vol.716:1-6.
APA	Liu,Yanmei.,Sun,Zhaoqi.,Jiang,Shanshan.,Li,Jing.,Liu,Mao.,...&Zheng,Changyong.(2017).Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy.Journal of Alloys and Compounds,Vol.716,1-6.
MLA	Liu,Yanmei,et al."Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy".Journal of Alloys and Compounds Vol.716(2017):1-6.

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