Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy | |
Liu,Yanmei; Sun,Zhaoqi; Jiang,Shanshan; Li,Jing; Liu,Mao; He,Huaxin; He,Gang; Li,Wendong; Zheng,Changyong | |
刊名 | Journal of Alloys and Compounds
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2017 | |
卷号 | Vol.716页码:1-6 |
关键词 | ATOMIC-LAYER-DEPOSITION DIELECTRICS AL2O3 HFO2 |
ISSN号 | 0925-8388 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2199290 |
专题 | 安徽大学 |
作者单位 | 1.Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Peoples R China 2.Chinese Acad Sci, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanostruct, Inst Solid State Phys, Hefei 230031, Peoples R China |
推荐引用方式 GB/T 7714 | Liu,Yanmei,Sun,Zhaoqi,Jiang,Shanshan,et al. Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy[J]. Journal of Alloys and Compounds,2017,Vol.716:1-6. |
APA | Liu,Yanmei.,Sun,Zhaoqi.,Jiang,Shanshan.,Li,Jing.,Liu,Mao.,...&Zheng,Changyong.(2017).Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy.Journal of Alloys and Compounds,Vol.716,1-6. |
MLA | Liu,Yanmei,et al."Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy".Journal of Alloys and Compounds Vol.716(2017):1-6. |
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