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	Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots
	Liu,Y.M.; Zhao,Z.Y.; Yang,K.T.; Xu,Z.C.; Birkedal,D.; Chen,X.S.; Leosson,K.; Hvam,J.M.; Sadowski,J.
刊名	Journal of Crystal Growth
	2003
卷号	Vol.251 No.1页码:177-180
关键词	A1. Nanostructures A1. X-ray diffraction A3. Molecular beam epitaxy A3. Semiconducting III-V materials
ISSN号	0022-0248
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2198964
专题	安徽大学
作者单位	1.Niels Bohr Institute, Copenhagen University, DK-2100 Copenhagen, Denmark 2.Department of Physics, Anhui University, Hefei, Anhui, P.R. China 3.Shanghai Institute of Technical Physics, Chinese Academy of Sciences, YuTian Road 500, Shanghai, P.R. China 4.Optoelectronics Group, Research Center COM, Technical University of Denmark, DTU345, DK-2800 Lyngby, Denmark
推荐引用方式 GB/T 7714	Liu,Y.M.,Zhao,Z.Y.,Yang,K.T.,et al. Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots[J]. Journal of Crystal Growth,2003,Vol.251 No.1:177-180.
APA	Liu,Y.M..,Zhao,Z.Y..,Yang,K.T..,Xu,Z.C..,Birkedal,D..,...&Sadowski,J..(2003).Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots.Journal of Crystal Growth,Vol.251 No.1,177-180.
MLA	Liu,Y.M.,et al."Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots".Journal of Crystal Growth Vol.251 No.1(2003):177-180.

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