Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots | |
Liu,Y.M.; Zhao,Z.Y.; Yang,K.T.; Xu,Z.C.; Birkedal,D.; Chen,X.S.; Leosson,K.; Hvam,J.M.; Sadowski,J. | |
刊名 | Journal of Crystal Growth
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2003 | |
卷号 | Vol.251 No.1页码:177-180 |
关键词 | A1. Nanostructures A1. X-ray diffraction A3. Molecular beam epitaxy A3. Semiconducting III-V materials |
ISSN号 | 0022-0248 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2198964 |
专题 | 安徽大学 |
作者单位 | 1.Niels Bohr Institute, Copenhagen University, DK-2100 Copenhagen, Denmark 2.Department of Physics, Anhui University, Hefei, Anhui, P.R. China 3.Shanghai Institute of Technical Physics, Chinese Academy of Sciences, YuTian Road 500, Shanghai, P.R. China 4.Optoelectronics Group, Research Center COM, Technical University of Denmark, DTU345, DK-2800 Lyngby, Denmark |
推荐引用方式 GB/T 7714 | Liu,Y.M.,Zhao,Z.Y.,Yang,K.T.,et al. Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots[J]. Journal of Crystal Growth,2003,Vol.251 No.1:177-180. |
APA | Liu,Y.M..,Zhao,Z.Y..,Yang,K.T..,Xu,Z.C..,Birkedal,D..,...&Sadowski,J..(2003).Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots.Journal of Crystal Growth,Vol.251 No.1,177-180. |
MLA | Liu,Y.M.,et al."Effect of annealing on the structure and optical properties of InGaAs/GaAs quantum dots".Journal of Crystal Growth Vol.251 No.1(2003):177-180. |
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