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	Multilevel storage characteristics in ZrO2-ReRAM brought about by ideal current limiter
	Lv,Hang-Bing; Chen,Jun-Ning; Liu,Ming; Long,Shi-Bing; Lian,Wen-Tai; Liu,Qi; Wang,Yan; Li,Ying-Tao; Dai,Yue-Hua; Zhang,Sen
刊名	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
	2010
页码	1112-1114
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2198922
专题	安徽大学
作者单位	1.Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China 2.2College of Electronics and Technology,Anhui University, Hefei, 230039, China
推荐引用方式 GB/T 7714	Lv,Hang-Bing,Chen,Jun-Ning,Liu,Ming,et al. Multilevel storage characteristics in ZrO2-ReRAM brought about by ideal current limiter[J]. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings,2010:1112-1114.
APA	Lv,Hang-Bing.,Chen,Jun-Ning.,Liu,Ming.,Long,Shi-Bing.,Lian,Wen-Tai.,...&Zhang,Sen.(2010).Multilevel storage characteristics in ZrO2-ReRAM brought about by ideal current limiter.ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings,1112-1114.
MLA	Lv,Hang-Bing,et al."Multilevel storage characteristics in ZrO2-ReRAM brought about by ideal current limiter".ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (2010):1112-1114.

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