Improved efficiency of near-ultraviolet LEDs using a novel p-type AlGaN hole injection layer (EI收录) | |
Xu, Mingsheng[1]; Zhou, Quanbin[1]; Zhang, Heng[2]; Wang, Hong[1]; Zhang, Xichun[1] | |
刊名 | Superlattices and Microstructures |
2016 | |
卷号 | 94页码:25-29 |
关键词 | Charge injection Efficiency Electron injection Optical properties Quantum efficiency Ultraviolet radiation |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2196767 |
专题 | 华南理工大学 |
作者单位 | 1.[1] Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou, China 2.[2] State Key Laboratory of Crystal Materials, Shandong University, Jinan, China |
推荐引用方式 GB/T 7714 | Xu, Mingsheng[1],Zhou, Quanbin[1],Zhang, Heng[2],等. Improved efficiency of near-ultraviolet LEDs using a novel p-type AlGaN hole injection layer (EI收录)[J]. Superlattices and Microstructures,2016,94:25-29. |
APA | Xu, Mingsheng[1],Zhou, Quanbin[1],Zhang, Heng[2],Wang, Hong[1],&Zhang, Xichun[1].(2016).Improved efficiency of near-ultraviolet LEDs using a novel p-type AlGaN hole injection layer (EI收录).Superlattices and Microstructures,94,25-29. |
MLA | Xu, Mingsheng[1],et al."Improved efficiency of near-ultraviolet LEDs using a novel p-type AlGaN hole injection layer (EI收录)".Superlattices and Microstructures 94(2016):25-29. |
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