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	Improved efficiency of near-ultraviolet LEDs using a novel p-type AlGaN hole injection layer (EI收录)
	Xu, Mingsheng[1]; Zhou, Quanbin[1]; Zhang, Heng[2]; Wang, Hong[1]; Zhang, Xichun[1]
刊名	Superlattices and Microstructures
	2016
卷号	94页码:25-29
关键词	Charge injection Efficiency Electron injection Optical properties Quantum efficiency Ultraviolet radiation
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2196767
专题	华南理工大学
作者单位	1.[1] Engineering Research Center for Optoelectronics of Guangdong Province, School of Physics and Optoelectronics, South China University of Technology, Guangzhou, China 2.[2] State Key Laboratory of Crystal Materials, Shandong University, Jinan, China
推荐引用方式 GB/T 7714	Xu, Mingsheng[1],Zhou, Quanbin[1],Zhang, Heng[2],等. Improved efficiency of near-ultraviolet LEDs using a novel p-type AlGaN hole injection layer (EI收录)[J]. Superlattices and Microstructures,2016,94:25-29.
APA	Xu, Mingsheng[1],Zhou, Quanbin[1],Zhang, Heng[2],Wang, Hong[1],&Zhang, Xichun[1].(2016).Improved efficiency of near-ultraviolet LEDs using a novel p-type AlGaN hole injection layer (EI收录).Superlattices and Microstructures,94,25-29.
MLA	Xu, Mingsheng[1],et al."Improved efficiency of near-ultraviolet LEDs using a novel p-type AlGaN hole injection layer (EI收录)".Superlattices and Microstructures 94(2016):25-29.

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