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	Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition (EI收录)
	Wang, Haiyan[1,2]; Wang, Wenliang[1,2]; Yang, Weijia[1,2]; Zhu, Yunnong[1,2]; Lin, Zhiting[1,2]; Li, Guoqiang[1,2,3]
刊名	Applied Surface Science
	2016
卷号	369页码:414-421
关键词	Atomic force microscopy Crystalline materials Deposition Epitaxial films Gallium nitride Microstructure Pulsed laser deposition Pulsed lasers Surface roughness
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2193606
专题	华南理工大学
作者单位	1.[1] State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China 2.[2] Engineering Research Center on Solid-State Lighting and Its Informationisation of Guangdong Province, South China University of Technology, Wushan Road, Guangzhou, China 3.[3] Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou, China
推荐引用方式 GB/T 7714	Wang, Haiyan[1,2],Wang, Wenliang[1,2],Yang, Weijia[1,2],等. Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition (EI收录)[J]. Applied Surface Science,2016,369:414-421.
APA	Wang, Haiyan[1,2],Wang, Wenliang[1,2],Yang, Weijia[1,2],Zhu, Yunnong[1,2],Lin, Zhiting[1,2],&Li, Guoqiang[1,2,3].(2016).Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition (EI收录).Applied Surface Science,369,414-421.
MLA	Wang, Haiyan[1,2],et al."Effect of residual stress on the microstructure of GaN epitaxial films grown by pulsed laser deposition (EI收录)".Applied Surface Science 369(2016):414-421.

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