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Improved short-circuit current density of a-Si:H thin film solar cells with n-type silicon carbide layer
Duan, Juanmei[1]; Wang, Weiyan[2]; Li, Hongjiang[3]; Huang, Jinhua[4]; Fang, Xuyang[5]; Song, Weijie[6]; Yang, Weiguang[7]
刊名JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
2017
卷号28页码:3955-3961
ISSN号0957-4522
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2193594
专题上海大学
作者单位[1]Department of Electronic Information Materials, Shanghai University, Shanghai, 200072, China |Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China [2]Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China [3]Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China [4]Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China [5]Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China [6]Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China |Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou, 213164, China[7]Department of Electronic Information Materials, Shanghai University, Shanghai, 200072, China
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Duan, Juanmei[1],Wang, Weiyan[2],Li, Hongjiang[3],et al. Improved short-circuit current density of a-Si:H thin film solar cells with n-type silicon carbide layer[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,2017,28:3955-3961.
APA Duan, Juanmei[1].,Wang, Weiyan[2].,Li, Hongjiang[3].,Huang, Jinhua[4].,Fang, Xuyang[5].,...&Yang, Weiguang[7].(2017).Improved short-circuit current density of a-Si:H thin film solar cells with n-type silicon carbide layer.JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS,28,3955-3961.
MLA Duan, Juanmei[1],et al."Improved short-circuit current density of a-Si:H thin film solar cells with n-type silicon carbide layer".JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 28(2017):3955-3961.
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