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	Monolayer hexagonal arsenene with tunable electronic structures and magnetic properties via impurity doping (EI收录)
	Li, Zhongjun[1]; Xu, Wei[1]; Yu, Yuanqin[2]; Du, Hongyang[1]; Zhen, Kun[1]; Wang, Jun[1]; Luo, Linbao[1]; Qiu, Huaili[1]; Yang, Xiaobao[3]
刊名	Journal of Materials Chemistry C
	2016
卷号	4页码:362-370
关键词	Calculations Electronic structure Energy gap Fermi level Germanium Magnetic moments Magnetic properties Magnetism Metals Monolayers Semiconductor doping Spin polarization
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2193157
专题	华南理工大学
作者单位	1.[1] School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei Anhui, China 2.[2] School of Physics and Material Science, Anhui University, Hefei Anhui, China 3.[3] Department of Physics, South China University of Technology, Guangzhou, Guangdong, China
推荐引用方式 GB/T 7714	Li, Zhongjun[1],Xu, Wei[1],Yu, Yuanqin[2],等. Monolayer hexagonal arsenene with tunable electronic structures and magnetic properties via impurity doping (EI收录)[J]. Journal of Materials Chemistry C,2016,4:362-370.
APA	Li, Zhongjun[1].,Xu, Wei[1].,Yu, Yuanqin[2].,Du, Hongyang[1].,Zhen, Kun[1].,...&Yang, Xiaobao[3].(2016).Monolayer hexagonal arsenene with tunable electronic structures and magnetic properties via impurity doping (EI收录).Journal of Materials Chemistry C,4,362-370.
MLA	Li, Zhongjun[1],et al."Monolayer hexagonal arsenene with tunable electronic structures and magnetic properties via impurity doping (EI收录)".Journal of Materials Chemistry C 4(2016):362-370.

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