| Self-consistent growth of single-crystalline ((2)over-bar01)beta-Ga2O3 nanowires using a flexible GaN seed nanocrystal | |
| Song, Pengyu[1]; Wu, Zhengyuan[2]; Shen, Xiyang[3]; Kang, Junyong[4]; Fang, Zhilai[5]; Zhang, Tong-Yi[6] | |
| 刊名 | CRYSTENGCOMM
 |
| 2017 | |
| 卷号 | 19页码:625-631 |
| ISSN号 | 1466-8033 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2193001 |
| 专题 | 上海大学 |
| 作者单位 | 1.[1]Xiamen Univ, Dept Phys, Collaborat Innovat Ctr Optoelect Semicond & Effic, Xiamen 361005, Peoples R China. 2.Fudan Univ, Sch Informat Sci & Technol, Dept Light Sources & Illuminating Engn, Shanghai 200433, Peoples R China. 3.[2]Xiamen Univ, Dept Phys, Collaborat Innovat Ctr Optoelect Semicond & Effic, Xiamen 361005, Peoples R China. 4.[3]Xiamen Univ, Dept Phys, Collaborat Innovat Ctr Optoelect Semicond & Effic, Xiamen 361005, Peoples R China. 5.[4]Xiamen Univ, Dept Phys, Collaborat Innovat Ctr Optoelect Semicond & Effic, Xiamen 361005, Peoples R China. 6.[5]Xiamen Univ, Dept Phys, Collaborat Innovat Ctr Optoelect Semicond & Effic, Xiamen 361005, Peoples R China. 7.Fudan Univ, Sch Informat Sci & Technol, Dept Light Sources & Illuminating Engn, Shanghai 200433, Peoples R China. 8.[6]Shanghai Univ, Shanghai Mat Genome Inst, 99 Shangda Rd, Shanghai 200444, Peoples R China.,Shanghai Univ, Mat Genome Inst, 99 Shangda Rd, Shanghai 200444, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Song, Pengyu[1],Wu, Zhengyuan[2],Shen, Xiyang[3],et al. Self-consistent growth of single-crystalline ((2)over-bar01)beta-Ga2O3 nanowires using a flexible GaN seed nanocrystal[J]. CRYSTENGCOMM,2017,19:625-631. |
| APA | Song, Pengyu[1],Wu, Zhengyuan[2],Shen, Xiyang[3],Kang, Junyong[4],Fang, Zhilai[5],&Zhang, Tong-Yi[6].(2017).Self-consistent growth of single-crystalline ((2)over-bar01)beta-Ga2O3 nanowires using a flexible GaN seed nanocrystal.CRYSTENGCOMM,19,625-631. |
| MLA | Song, Pengyu[1],et al."Self-consistent growth of single-crystalline ((2)over-bar01)beta-Ga2O3 nanowires using a flexible GaN seed nanocrystal".CRYSTENGCOMM 19(2017):625-631. |
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