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	Substrate temperature and thickness dependence of properties of boron and gallium co-doped ZnO films
	Yang, J.[1]; Huang, J.[2]; Lu, Y.X.[3]; Ji, H.H.[4]; Zhang, L.[5]; Tang, K.[6]; Cao, M.[7]; Hu, Y.[8]; Wang, L.J.[9]
刊名	SURFACE ENGINEERING
	2017
卷号	33页码:270-275
关键词	Boron and gallium co-doped ZnO Magnetron sputtering Substrate temperature Thickness
ISSN号	0267-0844
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2192990
专题	上海大学
作者单位	[1]School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China[2]School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China[3]School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China[4]School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China[5]School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China[6]School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China[7]School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China[8]School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China[9]School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China
推荐引用方式 GB/T 7714	Yang, J.[1],Huang, J.[2],Lu, Y.X.[3],et al. Substrate temperature and thickness dependence of properties of boron and gallium co-doped ZnO films[J]. SURFACE ENGINEERING,2017,33:270-275.
APA	Yang, J.[1].,Huang, J.[2].,Lu, Y.X.[3].,Ji, H.H.[4].,Zhang, L.[5].,...&Wang, L.J.[9].(2017).Substrate temperature and thickness dependence of properties of boron and gallium co-doped ZnO films.SURFACE ENGINEERING,33,270-275.
MLA	Yang, J.[1],et al."Substrate temperature and thickness dependence of properties of boron and gallium co-doped ZnO films".SURFACE ENGINEERING 33(2017):270-275.

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