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	Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl-2/N-2/O-2 plasma with a low-energy ion bombardment
	Zhong, Yaozong[1]; Yu Zhou[2]; Gao, Hongwei[3]; Dai, Shujun[4]; He, Junlei[5]; Feng, Meixin[6]; Qian Sun[7]; Zhang, Jijun[8]; Zhao, Yanfei[9]; An DingSun[10]
刊名	APPLIED SURFACE SCIENCE
	2017
卷号	420页码:817-824
关键词	AlGaN/GaN Etching self-termination Enhancement-mode HEMT TOF-SIMS XPS
ISSN号	0169-4332
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2188916
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201900, Peoples R China. 2.Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.,Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanodevice Div, Suzhou 215123, Peoples R China. 3.[2]Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.,Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanodevice Div, Suzhou 215123, Peoples R China. 4.[3]Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.,Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanodevice Div, Suzhou 215123, Peoples R China. 5.[4]Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.,Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanodevice Div, Suzhou 215123, Peoples R China. 6.[5]Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.,Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanodevice Div, Suzhou 215123, Peoples R China. 7.[6]Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.,Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanodevice Div, Suzhou 215123, Peoples R China. 8.[7]Chinese Acad Sci, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China.,Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Nanodevice Div, Suzhou 215123, Peoples R China. 9.[8]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 201900, Peoples R China. 10.[9]Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Vacuum Interconnected Nanotech Workstn, Suzhou 215123, Peoples R China.
推荐引用方式 GB/T 7714	Zhong, Yaozong[1],Yu Zhou[2],Gao, Hongwei[3],et al. Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl-2/N-2/O-2 plasma with a low-energy ion bombardment[J]. APPLIED SURFACE SCIENCE,2017,420:817-824.
APA	Zhong, Yaozong[1].,Yu Zhou[2].,Gao, Hongwei[3].,Dai, Shujun[4].,He, Junlei[5].,...&Hui Yang[11].(2017).Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl-2/N-2/O-2 plasma with a low-energy ion bombardment.APPLIED SURFACE SCIENCE,420,817-824.
MLA	Zhong, Yaozong[1],et al."Self-terminated etching of GaN with a high selectivity over AlGaN under inductively coupled Cl-2/N-2/O-2 plasma with a low-energy ion bombardment".APPLIED SURFACE SCIENCE 420(2017):817-824.

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