Enhancement of Electrical Stability in IGZO Thin-Film Transistors Inserted with an IZO Layer Grown by Atomic Layer Deposition | |
Ding, Xingwei[1]; Li, Sheng[2]; Song, Jiantao[3]; Zhang, Jianhua[4]; Jiang, Xueyin[5]; Zhang, Zhilin[6] | |
刊名 | JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS
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2017 | |
卷号 | 12页码:273-277 |
关键词 | Thin-Film Transistors Bilayer Density-of-States |
ISSN号 | 1555-130X |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2188752 |
专题 | 上海大学 |
作者单位 | 1.[1]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 2.Shanghai Univ, Sch Mechatron & Automat, Shanghai 200072, Peoples R China. 3.[2]Shanghai Univ, Sch Mechatron & Automat, Shanghai 200072, Peoples R China. 4.[3]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 5.[4]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 6.Shanghai Univ, Sch Mechatron & Automat, Shanghai 200072, Peoples R China. 7.[5]Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. 8.[6]Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China. 9.Shanghai Univ, Dept Mat Sci, Shanghai 200072, Peoples R China. |
推荐引用方式 GB/T 7714 | Ding, Xingwei[1],Li, Sheng[2],Song, Jiantao[3],et al. Enhancement of Electrical Stability in IGZO Thin-Film Transistors Inserted with an IZO Layer Grown by Atomic Layer Deposition[J]. JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS,2017,12:273-277. |
APA | Ding, Xingwei[1],Li, Sheng[2],Song, Jiantao[3],Zhang, Jianhua[4],Jiang, Xueyin[5],&Zhang, Zhilin[6].(2017).Enhancement of Electrical Stability in IGZO Thin-Film Transistors Inserted with an IZO Layer Grown by Atomic Layer Deposition.JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS,12,273-277. |
MLA | Ding, Xingwei[1],et al."Enhancement of Electrical Stability in IGZO Thin-Film Transistors Inserted with an IZO Layer Grown by Atomic Layer Deposition".JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS 12(2017):273-277. |
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