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	Improved photovoltaic effects in Mn-doped BiFeO3 ferroelectric thin films through band gap engineering
	Yan, Tang-Liu[1]; Chen, Bin[2]; Liu, Gang[3]; Niu, Rui-Peng[4]; Shang, Jie[5]; Gao, Shuang[6]; Xue, Wu-Hong[7]; Jin, Jing[8]; Yang, Jiu-Ru[9]; Li, Run-Wei[10]
刊名	CHINESE PHYSICS B
	2017
卷号	26
关键词	band gap engineering BiFeO3 Mn doping ferroelectric photovoltaic effect
ISSN号	1674-1056
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2188302
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 2.Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China.,Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China. 3.[2]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China.,Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China. 4.[3]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China.,Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China. 5.[4]Heilongjiang Univ, Elect Engn Coll, Harbin 150080, Peoples R China. 6.[5]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China.,Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China. 7.[6]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China.,Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China. 8.[7]Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Key Lab Magnet Mat & Devices, Ningbo 315201, Zhejiang, Peoples R China.,Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Zhejiang Prov Key Lab Magnet Mat & Applicat Techn, Ningbo 315201, Zhejiang, Peoples R China. 9.[8]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 10.[9]Heilongjiang Univ, Elect Engn Coll, Harbin 150080, Peoples R China.
推荐引用方式 GB/T 7714	Yan, Tang-Liu[1],Chen, Bin[2],Liu, Gang[3],et al. Improved photovoltaic effects in Mn-doped BiFeO3 ferroelectric thin films through band gap engineering[J]. CHINESE PHYSICS B,2017,26.
APA	Yan, Tang-Liu[1].,Chen, Bin[2].,Liu, Gang[3].,Niu, Rui-Peng[4].,Shang, Jie[5].,...&Li, Run-Wei[10].(2017).Improved photovoltaic effects in Mn-doped BiFeO3 ferroelectric thin films through band gap engineering.CHINESE PHYSICS B,26.
MLA	Yan, Tang-Liu[1],et al."Improved photovoltaic effects in Mn-doped BiFeO3 ferroelectric thin films through band gap engineering".CHINESE PHYSICS B 26(2017).

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