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	The role of oxygen defects in a bismuth doped ScVO4matrix: tuning luminescence by hydrogen treatment (EI收录)
	Zhang, Hai-Shan[1]; Kang, Fengwen[1,2]; Zhao, Yu-Jun[1]; Peng, Mingying[1]; Lei, Dang Yuan[2]; Yang, Xiao-Bao[1]
刊名	Journal of Materials Chemistry C
	2017
卷号	5页码:314-321
关键词	Atoms Bismuth Calculations Energy gap Luminescence Oxygen Oxygen vacancies Photoemission Scandium
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2184791
专题	华南理工大学
作者单位	1.[1] Department of Physics, School of Materials Science and Engineering, Key Laboratory of Advanced Energy Storage Materials of Guangdong Province, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, China 2.[2] Department of Applied Physics, Hong Kong Polytechnic University, Hong Kong, China
推荐引用方式 GB/T 7714	Zhang, Hai-Shan[1],Kang, Fengwen[1,2],Zhao, Yu-Jun[1],等. The role of oxygen defects in a bismuth doped ScVO4matrix: tuning luminescence by hydrogen treatment (EI收录)[J]. Journal of Materials Chemistry C,2017,5:314-321.
APA	Zhang, Hai-Shan[1],Kang, Fengwen[1,2],Zhao, Yu-Jun[1],Peng, Mingying[1],Lei, Dang Yuan[2],&Yang, Xiao-Bao[1].(2017).The role of oxygen defects in a bismuth doped ScVO4matrix: tuning luminescence by hydrogen treatment (EI收录).Journal of Materials Chemistry C,5,314-321.
MLA	Zhang, Hai-Shan[1],et al."The role of oxygen defects in a bismuth doped ScVO4matrix: tuning luminescence by hydrogen treatment (EI收录)".Journal of Materials Chemistry C 5(2017):314-321.

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