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	A comparison of density of states between InGaZnO based TFTs and InZnO based TFTs
	Huang, Chuan-Xin[1]; Li, Jun[2]; Zhu, Wen-Qing[3]; Zhang, Jian-Hua[4]; Jiang, Xue-Yin[5]; Zhang, Zhi-Lin[6]
刊名	MOLECULAR CRYSTALS AND LIQUID CRYSTALS
	2017
卷号	651页码:221-227
关键词	ALD Al2O3 DOSs oxide semiconductor transistor
ISSN号	1542-1406
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2183758
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai, Peoples R China. 2.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai, Peoples R China. 3.Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai, Peoples R China. 4.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai, Peoples R China. 5.[4]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai, Peoples R China. 6.[5]Shanghai Univ, Sch Mat Sci & Engn, Shanghai, Peoples R China. 7.[6]Shanghai Univ, Sch Mat Sci & Engn, Shanghai, Peoples R China. 8.Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai, Peoples R China.
推荐引用方式 GB/T 7714	Huang, Chuan-Xin[1],Li, Jun[2],Zhu, Wen-Qing[3],et al. A comparison of density of states between InGaZnO based TFTs and InZnO based TFTs[J]. MOLECULAR CRYSTALS AND LIQUID CRYSTALS,2017,651:221-227.
APA	Huang, Chuan-Xin[1],Li, Jun[2],Zhu, Wen-Qing[3],Zhang, Jian-Hua[4],Jiang, Xue-Yin[5],&Zhang, Zhi-Lin[6].(2017).A comparison of density of states between InGaZnO based TFTs and InZnO based TFTs.MOLECULAR CRYSTALS AND LIQUID CRYSTALS,651,221-227.
MLA	Huang, Chuan-Xin[1],et al."A comparison of density of states between InGaZnO based TFTs and InZnO based TFTs".MOLECULAR CRYSTALS AND LIQUID CRYSTALS 651(2017):221-227.

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