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	Growth of high-quality AlGaN epitaxial films on Si substrates (EI收录)
	Li, Yuan[1,2]; Wang, Wenliang[1,2,3]; Lin, Yunhao[1,2]; Li, Xiaochan[1,2]; Huang, Liegen[1,2]; Zheng, Yulin[1,2]; Zhang, Zichen[1,2]; Li, Guoqiang[1,2,3]
刊名	Materials Letters
	2017
卷号	207页码:133-136
关键词	Aluminum alloys Epitaxial films Gallium alloys Growth temperature Metallorganic chemical vapor deposition Morphology Organic chemicals Surface roughness Ultraviolet lasers
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2182413
专题	华南理工大学
作者单位	1.[1] State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 2.510640, China 3.[2] Department of Electronic Materials, School of Materials Science and Engineering, South China University of Technology, Guangzhou 4.510640, China 5.[3] Engineering Research Center on Solid-State Lighting and Its Informationisation of Guangdong Province, Guangzhou 6.510640, China
推荐引用方式 GB/T 7714	Li, Yuan[1,2],Wang, Wenliang[1,2,3],Lin, Yunhao[1,2],等. Growth of high-quality AlGaN epitaxial films on Si substrates (EI收录)[J]. Materials Letters,2017,207:133-136.
APA	Li, Yuan[1,2].,Wang, Wenliang[1,2,3].,Lin, Yunhao[1,2].,Li, Xiaochan[1,2].,Huang, Liegen[1,2].,...&Li, Guoqiang[1,2,3].(2017).Growth of high-quality AlGaN epitaxial films on Si substrates (EI收录).Materials Letters,207,133-136.
MLA	Li, Yuan[1,2],et al."Growth of high-quality AlGaN epitaxial films on Si substrates (EI收录)".Materials Letters 207(2017):133-136.

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