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	A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes
	Lu, Yuanxi[1]; Huang, Jian[2]; Li, Bing[3]; Tang, Ke[4]; Ma, Yuncheng[5]; Cao, Meng[6]; Wang, Lin[7]; Wang, Linjun[8]
刊名	APPLIED SURFACE SCIENCE
	2018
卷号	428页码:61-65
关键词	ZnO Heterojunction Magnetron sputtering UV
ISSN号	0169-4332
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2181854
专题	上海大学
作者单位	1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 2.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 3.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 4.[4]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 5.[5]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 6.[6]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 7.[7]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China. 8.[8]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China.
推荐引用方式 GB/T 7714	Lu, Yuanxi[1],Huang, Jian[2],Li, Bing[3],et al. A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes[J]. APPLIED SURFACE SCIENCE,2018,428:61-65.
APA	Lu, Yuanxi[1].,Huang, Jian[2].,Li, Bing[3].,Tang, Ke[4].,Ma, Yuncheng[5].,...&Wang, Linjun[8].(2018).A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes.APPLIED SURFACE SCIENCE,428,61-65.
MLA	Lu, Yuanxi[1],et al."A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes".APPLIED SURFACE SCIENCE 428(2018):61-65.

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