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	Room-temperature ferromagnetic enhancement and crossover of negative to positive magnetoresistance in n-doped in2o3 films
	Shen, Luhang1,2; An, Yukai1,2; Cao, Dandan1,2; Wu, Zhonghua3; Liu, Jiwen1,2
刊名	Journal of physical chemistry c
	2017-11-30
卷号	121期号:47页码:26499-26506
ISSN号	1932-7447
DOI	10.1021/acs.jpcc.7b08732
通讯作者	An, yukai(ykan@tjut.edu.cn) ; Liu, jiwen(jwliu@tjut.edu.cn)
英文摘要	The effects of n-induced acceptor defects on tuning optical, transport, and magnetic properties of in2o3 films fabricated by magnetron sputtering technique were investigated systematically by x-ray diffraction, x-ray photoelectron spectroscopy, uvvisible absorbance, hall effect, film resistivity (rho) versus temperature, magnetoresistance, and magnetic measurements. detailed structural analyses reveal that n-doped in2o3 films have a cubic bixbyite structure with the substitutional n defect at the o sites of in2o3 lattice. the n-doped in2o3 films display clear room-temperature ferromagnetic behavior and mott variable range-hopping transport behavior. with increasing n-doping concentration, the saturated magnetization of the films monotonically increases and the conductivity transforms into p-type. crossover of negative to positive magnetoresistance and a red shift of the optical band gap eg are also observed with n-doping. first-principles calculations show that the localized holes induced by n-doping can mediate the magnetic interaction by short-range n-1:p-in:d/p-n-2:p hybridization in n-doped in2o3 system. therefore, the intrinsic ferromagnetic ordering in n-doped in2o3 films can be attributed to pp interaction between n 2p orbitals, which causes a large zeeman-split effect to suppress the carriers hopping path, leading to formation of positive magnetoresistance.
WOS关键词	THIN-FILMS ; MAGNETIC SEMICONDUCTORS ; OXIDE ; NANOCRYSTALS ; MODEL
WOS研究方向	Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS类目	Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
语种	英语
出版者	AMER CHEMICAL SOC
WOS记录号	WOS:000417228500041
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2177851
专题	高能物理研究所
通讯作者	An, Yukai; Liu, Jiwen
作者单位	1.Tianjin Univ Technol, Key Lab Display Mat & Photoelect Devices, Natl Demonstrat Ctr Expt Funct Mat Educ, Minist Educ,Tianjin Key Lab Photoelect Mat & Devi, Tianjin 300384, Peoples R China 2.Tianjin Univ Technol, Sch Mat Sci & Engn, Tianjin 300384, Peoples R China 3.Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Shen, Luhang,An, Yukai,Cao, Dandan,et al. Room-temperature ferromagnetic enhancement and crossover of negative to positive magnetoresistance in n-doped in2o3 films[J]. Journal of physical chemistry c,2017,121(47):26499-26506.
APA	Shen, Luhang,An, Yukai,Cao, Dandan,Wu, Zhonghua,&Liu, Jiwen.(2017).Room-temperature ferromagnetic enhancement and crossover of negative to positive magnetoresistance in n-doped in2o3 films.Journal of physical chemistry c,121(47),26499-26506.
MLA	Shen, Luhang,et al."Room-temperature ferromagnetic enhancement and crossover of negative to positive magnetoresistance in n-doped in2o3 films".Journal of physical chemistry c 121.47(2017):26499-26506.

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