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	The effect of hfo2 on the magnetic anisotropy, electrical structure and microstructure of cofeb/mgo films
	Li, Minghua1; Shi, Hui1; Chen, Xi1,2,3; Fang, Shuai1; Han, Gang1; Zhao, Chongjun1; Zhang, Peng4; Wang, Baoyi4; Cao, Xingzhong4; Wang, Dongwei5
刊名	Journal of alloys and compounds
	2017-11-25
卷号	725页码:425-432
关键词	Hfo2 Cofeb/mgo Magnetic anisotropy Film defects Oxygen migration
ISSN号	0925-8388
DOI	10.1016/j.jallcom.2017.07.142
通讯作者	Li, minghua(mhli@ustb.edu.cn) ; Wang, dongwei(wangdw@nanoctr.cn)
英文摘要	Metal oxides are used in magnetic tunnel junctions to improve the magnetic properties and thermostability of materials in high-performance applications. in this study, an ultrathin hf film is deposited on a ta buffer layer. moreover, subsequent annealing at 350 degrees c leads to the oxidation of hf into hfo2, as confirmed by x-ray photoelectron spectrometry (xps). the effect of hfo2 on magnetic anisotropy is evaluated in ta/hf/cofeb/mgo/ta multilayer films. easy-axis magnetisation transition from in-plane to out-of-plane direction is observed at an annealing temperature of 200 degrees c. moreover, the sample annealed at a temperature of 350 degrees c exhibits clear perpendicular magnetic anisotropy, which satisfies industry requirements in terms of annealing temperature for magnetic random access memory applications. xps, positron annihilation spectroscopy (pas), x-ray reflectivity (xrr) and atomic force microscopy (afm) are used to study film composition, defects, interface width and surface roughness in ta/hf/cofeb/mgo/ta multilayers. xps results demonstrate partial suppression of ta atom diffusion and enhanced formation of fe (co) oxides in cofeb/mgo. the results of pas analysis suggest that the density of film defects decreases after annealing at 350 degrees c. xrr and afm results reveal that annealing at 350 degrees c produces a smoother cofeb/mgo interface. together, these factors lead to improved magnetic properties and thermostability in a ta/hf/cofeb/mgo/ta film. (c) 2017 elsevier b.v. all rights reserved.
WOS关键词	PERPENDICULAR-ANISOTROPY ; OXIDE CATALYSTS ; INTERFACE
WOS研究方向	Chemistry ; Materials Science ; Metallurgy & Metallurgical Engineering
WOS类目	Chemistry, Physical ; Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering
语种	英语
出版者	ELSEVIER SCIENCE SA
WOS记录号	WOS:000412332900050
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2177082
专题	高能物理研究所
通讯作者	Li, Minghua; Wang, Dongwei
作者单位	1.Univ Sci & Technol Beijing, Dept Mat Phys & Chem, Beijing 100083, Peoples R China 2.Nanjing Univ Sci & Technol, Minist Ind & Informat Technol, Key Lab Adv Display Mat & Devices, Nanjing 210094, Jiangsu, Peoples R China 3.Nanjing Univ Sci & Technol, Coll Mat Sci & Engn, Inst Optoelect & Nanomat, Nanjing 210094, Jiangsu, Peoples R China 4.Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China 5.Natl Ctr Nanosci & Nanotechnol, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Li, Minghua,Shi, Hui,Chen, Xi,et al. The effect of hfo2 on the magnetic anisotropy, electrical structure and microstructure of cofeb/mgo films[J]. Journal of alloys and compounds,2017,725:425-432.
APA	Li, Minghua.,Shi, Hui.,Chen, Xi.,Fang, Shuai.,Han, Gang.,...&Yu, Guanghua.(2017).The effect of hfo2 on the magnetic anisotropy, electrical structure and microstructure of cofeb/mgo films.Journal of alloys and compounds,725,425-432.
MLA	Li, Minghua,et al."The effect of hfo2 on the magnetic anisotropy, electrical structure and microstructure of cofeb/mgo films".Journal of alloys and compounds 725(2017):425-432.

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