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	Interface chemistry study of insb/al2o3 stacks upon in situ post deposition annealing by synchrotron radiation photoemission spectroscopy
	Shi, Xiaoran1; Wang, Xinglu1; Sun, Yong1; Liu, Chen2; Wang, WeiHua1; Cheng, Yahui1; Wang, Weichao1; Wang, Jiaou2; Cho, Kyeongjae1,3; Lu, Feng1
刊名	Applied surface science
	2017-12-15
卷号	425页码:932-940
关键词	Insb/al2o3 stacks Ald Pda Synchrotron radiation Diffusion Desorption
ISSN号	0169-4332
DOI	10.1016/j.apsusc.2017.07.001
通讯作者	Dong, hong(donghong@nankai.edu.cn)
英文摘要	The thermal stability of insb/al2o3 stacks has been systematically studied upon in situ post deposition annealing (pda) at 300 degrees c and 400 degrees c. atomic layer deposition (ald) of al2o3 (similar to 3 nm) has been grown on the native oxide and the hcl aqueous solution treated insb (100) at 200 degrees c. the interface chemistry, elemental diffusion as well as elemental desorption are characterized by synchrotron radiation photoemission spectroscopy (srpes) with the incident photon energy of 750, 600 and 500 ev. a math model has been proposed to calculate the depth profile for in and sb oxides based on the analysis from different incident energies. indium atoms have re-oxidized during ald process, and indium oxide has been observed to diffuse into the al2o3 film upon pda at 300 degrees c for the hcl pretreated sample. indium oxide has desorbed and diffused upon pda process for the native oxide sample. sb oxide has been observed to desorb continuously as pda temperature increases, for all samples. the surface has been torn up upon pda at 400 degrees c from the morphology characterization. (c) 2017 elsevier b.v. all rights reserved.
WOS关键词	ATOMIC LAYER DEPOSITION ; INDIUM DIFFUSION ; FILMS ; TEMPERATURE ; SURFACE ; HFO2 ; NANOSTRUCTURES ; PASSIVATION ; EVOLUTION ; OXIDES
WOS研究方向	Chemistry ; Materials Science ; Physics
WOS类目	Chemistry, Physical ; Materials Science, Coatings & Films ; Physics, Applied ; Physics, Condensed Matter
语种	英语
出版者	ELSEVIER SCIENCE BV
WOS记录号	WOS:000410609400114
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2177051
专题	高能物理研究所
通讯作者	Dong, Hong
作者单位	1.Nankai Univ, Coll Elect Informat & Opt Engn, Tianjin 300350, Peoples R China 2.Chinese Acad Sci, IHEP, Beijing 100049, Peoples R China 3.Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
推荐引用方式 GB/T 7714	Shi, Xiaoran,Wang, Xinglu,Sun, Yong,et al. Interface chemistry study of insb/al2o3 stacks upon in situ post deposition annealing by synchrotron radiation photoemission spectroscopy[J]. Applied surface science,2017,425:932-940.
APA	Shi, Xiaoran.,Wang, Xinglu.,Sun, Yong.,Liu, Chen.,Wang, WeiHua.,...&Dong, Hong.(2017).Interface chemistry study of insb/al2o3 stacks upon in situ post deposition annealing by synchrotron radiation photoemission spectroscopy.Applied surface science,425,932-940.
MLA	Shi, Xiaoran,et al."Interface chemistry study of insb/al2o3 stacks upon in situ post deposition annealing by synchrotron radiation photoemission spectroscopy".Applied surface science 425(2017):932-940.

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