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Positron annihilation study of photoluminescence of porous silicon treated by water vapor annealing
Li Zhuo-Xin1,2; Wang Dan-Ni1; Wang Bao-Yi1; Xue De-Sheng2; Wei Long1; Qin Xiu-Bo1
刊名Acta physica sinica
2010-12-01
卷号59期号:12页码:8915-8919
关键词Porous silicon Photoluminescence Positron annihilation spectroscopy
ISSN号1000-3290
通讯作者Wang bao-yi(wangboy@ihep.ac.cn)
英文摘要Porous silicon (ps) treated by water vapor annealing and vacuum annealing has been studied by positron annihilation lifetime spectroscopy and age-momentum correlation measurement. it is found that after water vapor annealing, non-radiative defects are reduced and defects dominating light source appear. these two types of defects change the lifetime and the s parameter of the positron annihilation and cause a drastic enhancement in the photoluminescence (pl) efficiency. defects that cause the pl of ps show no obvious change after annealing at 300 degrees c in vacuum, therefore the pl of the sample is not influenced.
WOS关键词HYPERFINE INTERACTION ; THERMAL (100)SI/SIO2 ; LIFETIME ; STATE ; SI
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
语种英语
出版者CHINESE PHYSICAL SOC
WOS记录号WOS:000286689500086
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2175963
专题高能物理研究所
通讯作者Wang Bao-Yi
作者单位1.Chinese Acad Sci, Inst High Energy Phys, Key Lab Nucl Anal Tech, Beijing 100049, Peoples R China
2.Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Peoples R China
推荐引用方式
GB/T 7714
Li Zhuo-Xin,Wang Dan-Ni,Wang Bao-Yi,et al. Positron annihilation study of photoluminescence of porous silicon treated by water vapor annealing[J]. Acta physica sinica,2010,59(12):8915-8919.
APA Li Zhuo-Xin,Wang Dan-Ni,Wang Bao-Yi,Xue De-Sheng,Wei Long,&Qin Xiu-Bo.(2010).Positron annihilation study of photoluminescence of porous silicon treated by water vapor annealing.Acta physica sinica,59(12),8915-8919.
MLA Li Zhuo-Xin,et al."Positron annihilation study of photoluminescence of porous silicon treated by water vapor annealing".Acta physica sinica 59.12(2010):8915-8919.
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