QQ客服 官方微博 反馈留言

	Band offset measurements in atomic-layer-deposited al2o3/zn0.8al0.2o heterojunction studied by x-ray photoelectron spectroscopy
	Yan,Baojun1; Liu,Shulin1; Heng,Yuekun1; Yang,Yuzhen1,2; Yu,Yang1,3; Wen,Kaile1,4
刊名	Nanoscale research letters
	2017-05-19
卷号	12期号:1
关键词	Atomic layer deposition X-ray photoelectron spectroscopy Heterojunction Microchannel plate
ISSN号	1931-7573
DOI	10.1186/s11671-017-2131-8
通讯作者	Yan,baojun(yanbj@ihep.ac.cn)
英文摘要	Abstractpure aluminum oxide (al2o3) and zinc aluminum oxide (znxal1-xo) thin films were deposited by atomic layer deposition (ald). the microstructure and optical band gaps (eg) of the znxal1-xo (0.2?≤?x?≤?1) films were studied by x-ray diffractometer and tauc method. the band offsets and alignment of atomic-layer-deposited al2o3/zn0.8al0.2o heterojunction were investigated in detail using charge-corrected x-ray photoelectron spectroscopy. in this work, different methodologies were adopted to recover the actual position of the core levels in insulator materials which were easily affected by differential charging phenomena. valence band offset (δev) and conduction band offset (δec) for the interface of the al2o3/zn0.8al0.2o heterojunction have been constructed. an accurate value of δev?=?0.82?±?0.12?ev was obtained from various combinations of core levels of heterojunction with varied al2o3 thickness. given the experimental eg of 6.8?ev for al2o3 and 5.29?ev for zn0.8al0.2o, a type-i heterojunction with a δec of 0.69?±?0.12?ev was found. the precise determination of the band alignment of al2o3/zn0.8al0.2o heterojunction is of particular importance for gaining insight to the design of various electronic devices based on such heterointerface.
语种	英语
出版者	Springer US
WOS记录号	BMC:10.1186/S11671-017-2131-8
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2175671
专题	高能物理研究所
通讯作者	Yan,Baojun
作者单位	1.Institute of High Energy Physics of Chinese Academy of Sciences; State Key Laboratory of Particle Detection and Electronics 2.Nanjing University; Department of Physics 3.Xi’an University of Technology; School of Science 4.University of Chinese Academy of Sciences
推荐引用方式 GB/T 7714	Yan,Baojun,Liu,Shulin,Heng,Yuekun,et al. Band offset measurements in atomic-layer-deposited al2o3/zn0.8al0.2o heterojunction studied by x-ray photoelectron spectroscopy[J]. Nanoscale research letters,2017,12(1).
APA	Yan,Baojun,Liu,Shulin,Heng,Yuekun,Yang,Yuzhen,Yu,Yang,&Wen,Kaile.(2017).Band offset measurements in atomic-layer-deposited al2o3/zn0.8al0.2o heterojunction studied by x-ray photoelectron spectroscopy.Nanoscale research letters,12(1).
MLA	Yan,Baojun,et al."Band offset measurements in atomic-layer-deposited al2o3/zn0.8al0.2o heterojunction studied by x-ray photoelectron spectroscopy".Nanoscale research letters 12.1(2017).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。