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Effective atomic interface engineering in Bi2Te2.7Se0.3 thermoelectric material by atomic-layer-deposition approach
Li, Shuankui[1]; Liu, Yidong[2]; Liu, Fusheng[3]; He, Dongsheng[4]; He, Jiaqing[5]; Luo, Jun[6]; Xiao, Yinguo[7]; Pan, Feng[8]
刊名NANO ENERGY
2018
卷号49页码:257-266
关键词Thermoelectric Bi2Te3 Atomic-Layer-Deposition Nanocomposites Energy filtering
ISSN号2211-2855
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2174024
专题上海大学
作者单位1.[1]Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China.
2.[2]Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China.
3.[3]Shenzhen Univ, Coll Mat Sci & Engn, Shenzhen 518060, Peoples R China.,Shenzhen Key Lab Special Funct Mat, Shenzhen 518060, Peoples R China.
4.[4]South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China.
5.[5]South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China.
6.[6]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200444, Peoples R China.
7.[7]Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China.
8.[8]Peking Univ, Shenzhen Grad Sch, Sch Adv Mat, Shenzhen 518055, Peoples R China.
推荐引用方式
GB/T 7714
Li, Shuankui[1],Liu, Yidong[2],Liu, Fusheng[3],et al. Effective atomic interface engineering in Bi2Te2.7Se0.3 thermoelectric material by atomic-layer-deposition approach[J]. NANO ENERGY,2018,49:257-266.
APA Li, Shuankui[1].,Liu, Yidong[2].,Liu, Fusheng[3].,He, Dongsheng[4].,He, Jiaqing[5].,...&Pan, Feng[8].(2018).Effective atomic interface engineering in Bi2Te2.7Se0.3 thermoelectric material by atomic-layer-deposition approach.NANO ENERGY,49,257-266.
MLA Li, Shuankui[1],et al."Effective atomic interface engineering in Bi2Te2.7Se0.3 thermoelectric material by atomic-layer-deposition approach".NANO ENERGY 49(2018):257-266.
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