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Enhanced Stability of Sr-Doped Aqueous In2O3 Thin-Film Transistors Under Bias/Illumination/Thermal Stress
Zhou, You-Hang[1]; Li, Jun[2]; Zhong, De-Yao[3]; Li, Xi-Feng[4]; Zhang, Jian-Hua[5]
刊名IEEE TRANSACTIONS ON ELECTRON DEVICES
2019
卷号66页码:1308-1313
关键词Aqueous solutionmethod oxygen-related defect SrInO thin-film transistor (TFT) stability
ISSN号0018-9383
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2161926
专题上海大学
作者单位1.[1]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China.
2.[2]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China.
3.[3]Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China.
4.[4]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China.
5.[5]Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China.
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Zhou, You-Hang[1],Li, Jun[2],Zhong, De-Yao[3],et al. Enhanced Stability of Sr-Doped Aqueous In2O3 Thin-Film Transistors Under Bias/Illumination/Thermal Stress[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES,2019,66:1308-1313.
APA Zhou, You-Hang[1],Li, Jun[2],Zhong, De-Yao[3],Li, Xi-Feng[4],&Zhang, Jian-Hua[5].(2019).Enhanced Stability of Sr-Doped Aqueous In2O3 Thin-Film Transistors Under Bias/Illumination/Thermal Stress.IEEE TRANSACTIONS ON ELECTRON DEVICES,66,1308-1313.
MLA Zhou, You-Hang[1],et al."Enhanced Stability of Sr-Doped Aqueous In2O3 Thin-Film Transistors Under Bias/Illumination/Thermal Stress".IEEE TRANSACTIONS ON ELECTRON DEVICES 66(2019):1308-1313.
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