| Novel 8T bit-cell with high RSNM for sub-threshold SRAM | |
| Wu,Qiulei; Wang,Kun; Lu,Wenjuan; Tan,Shoubiao; Peng,Chunyu | |
| 刊名 | Journal of Information and Computational Science
 |
| 2014 | |
| 卷号 | Vol.11 No.15页码:5377-5384 |
| ISSN号 | 1548-7741 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2159650 |
| 专题 | 安徽大学 |
| 作者单位 | School of Electronics and Information Engineering,Anhui University, Hefei , China |
| 推荐引用方式 GB/T 7714 | Wu,Qiulei,Wang,Kun,Lu,Wenjuan,et al. Novel 8T bit-cell with high RSNM for sub-threshold SRAM[J]. Journal of Information and Computational Science,2014,Vol.11 No.15:5377-5384. |
| APA | Wu,Qiulei,Wang,Kun,Lu,Wenjuan,Tan,Shoubiao,&Peng,Chunyu.(2014).Novel 8T bit-cell with high RSNM for sub-threshold SRAM.Journal of Information and Computational Science,Vol.11 No.15,5377-5384. |
| MLA | Wu,Qiulei,et al."Novel 8T bit-cell with high RSNM for sub-threshold SRAM".Journal of Information and Computational Science Vol.11 No.15(2014):5377-5384. |
| 个性服务 |
| 查看访问统计 |
| 相关权益政策 |
| 暂无数据 |
| 收藏/分享 |
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。
修改评论