Novel 8T bit-cell with high RSNM for sub-threshold SRAM | |
Wu,Qiulei; Wang,Kun; Lu,Wenjuan; Tan,Shoubiao; Peng,Chunyu | |
刊名 | Journal of Information and Computational Science
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2014 | |
卷号 | Vol.11 No.15页码:5377-5384 |
ISSN号 | 1548-7741 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2159650 |
专题 | 安徽大学 |
作者单位 | School of Electronics and Information Engineering,Anhui University, Hefei , China |
推荐引用方式 GB/T 7714 | Wu,Qiulei,Wang,Kun,Lu,Wenjuan,et al. Novel 8T bit-cell with high RSNM for sub-threshold SRAM[J]. Journal of Information and Computational Science,2014,Vol.11 No.15:5377-5384. |
APA | Wu,Qiulei,Wang,Kun,Lu,Wenjuan,Tan,Shoubiao,&Peng,Chunyu.(2014).Novel 8T bit-cell with high RSNM for sub-threshold SRAM.Journal of Information and Computational Science,Vol.11 No.15,5377-5384. |
MLA | Wu,Qiulei,et al."Novel 8T bit-cell with high RSNM for sub-threshold SRAM".Journal of Information and Computational Science Vol.11 No.15(2014):5377-5384. |
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