Effect of oxygen vacancy on lattice and electronic properties of HfO2 by means of density function theory study | |
Jiang Xian-Wei; Dai Guang-Zhen; Liu Qi; Chen Jun-Ning; Dai Yue-Hua; Xu Tai-Long | |
刊名 | ACTA PHYSICA SINICA
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2015 | |
卷号 | Vol.64 No.3 |
关键词 | HAFNIUM-ALUMINUM-OXIDE CUBIC HFO2 MEMORY |
ISSN号 | 1000-3290 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2158899 |
专题 | 安徽大学 |
作者单位 | 1.Anhui Univ, Sch Elect & Informat Engn, Anhui Prov Key Lab Integrated Circuit Design, Hefei 230601, Peoples R China 2.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China 3.Anhui Polytech Univ, Sch Elect Engn, Anhui Prov Key Lab Detect & Automat, Wuhu 241000, Peoples R China |
推荐引用方式 GB/T 7714 | Jiang Xian-Wei,Dai Guang-Zhen,Liu Qi,et al. Effect of oxygen vacancy on lattice and electronic properties of HfO2 by means of density function theory study[J]. ACTA PHYSICA SINICA,2015,Vol.64 No.3. |
APA | Jiang Xian-Wei,Dai Guang-Zhen,Liu Qi,Chen Jun-Ning,Dai Yue-Hua,&Xu Tai-Long.(2015).Effect of oxygen vacancy on lattice and electronic properties of HfO2 by means of density function theory study.ACTA PHYSICA SINICA,Vol.64 No.3. |
MLA | Jiang Xian-Wei,et al."Effect of oxygen vacancy on lattice and electronic properties of HfO2 by means of density function theory study".ACTA PHYSICA SINICA Vol.64 No.3(2015). |
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