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	Effect of oxygen vacancy on lattice and electronic properties of HfO2 by means of density function theory study
	Jiang Xian-Wei; Dai Guang-Zhen; Liu Qi; Chen Jun-Ning; Dai Yue-Hua; Xu Tai-Long
刊名	ACTA PHYSICA SINICA
	2015
卷号	Vol.64 No.3
关键词	HAFNIUM-ALUMINUM-OXIDE CUBIC HFO2 MEMORY
ISSN号	1000-3290
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2158899
专题	安徽大学
作者单位	1.Anhui Univ, Sch Elect & Informat Engn, Anhui Prov Key Lab Integrated Circuit Design, Hefei 230601, Peoples R China 2.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China 3.Anhui Polytech Univ, Sch Elect Engn, Anhui Prov Key Lab Detect & Automat, Wuhu 241000, Peoples R China
推荐引用方式 GB/T 7714	Jiang Xian-Wei,Dai Guang-Zhen,Liu Qi,et al. Effect of oxygen vacancy on lattice and electronic properties of HfO2 by means of density function theory study[J]. ACTA PHYSICA SINICA,2015,Vol.64 No.3.
APA	Jiang Xian-Wei,Dai Guang-Zhen,Liu Qi,Chen Jun-Ning,Dai Yue-Hua,&Xu Tai-Long.(2015).Effect of oxygen vacancy on lattice and electronic properties of HfO2 by means of density function theory study.ACTA PHYSICA SINICA,Vol.64 No.3.
MLA	Jiang Xian-Wei,et al."Effect of oxygen vacancy on lattice and electronic properties of HfO2 by means of density function theory study".ACTA PHYSICA SINICA Vol.64 No.3(2015).

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