| Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation | |
| Sun,Zhaoqi; Liu,Mao; Chen,Hanshuang; Gao,Juan; Xiao,Dongqi; Jin,Peng; He,Gang; Zheng,Changyong | |
| 刊名 | Journal of Alloys and Compounds
 |
| 2016 | |
| 卷号 | Vol.667页码:352-358 |
| 关键词 | TEMPERATURE-DEPENDENCE LEAKAGE CURRENT DIELECTRICS OXIDE FILMS SI CAPACITORS THICKNESS |
| ISSN号 | 0925-8388 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2158365 |
| 专题 | 安徽大学 |
| 作者单位 | 1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanostruct, Hefei 230031, Peoples R China 2.Anhui Univ, Radiat Detect Mat & Devices Lab, Sch Phys & Mat Sci, Hefei 230601, Peoples R China 3.Anhui Univ Sci & Technol, Sch Sci, Huainan 232001, Peoples R China |
| 推荐引用方式 GB/T 7714 | Sun,Zhaoqi,Liu,Mao,Chen,Hanshuang,et al. Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation[J]. Journal of Alloys and Compounds,2016,Vol.667:352-358. |
| APA | Sun,Zhaoqi.,Liu,Mao.,Chen,Hanshuang.,Gao,Juan.,Xiao,Dongqi.,...&Zheng,Changyong.(2016).Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation.Journal of Alloys and Compounds,Vol.667,352-358. |
| MLA | Sun,Zhaoqi,et al."Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation".Journal of Alloys and Compounds Vol.667(2016):352-358. |
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