| Two-colour mid-infrared absorption in InAs/GaSb type II and broken-gap quantum wells under gated electric field | |
| Wei,XF; Li,LL; Liu,LW; Xu,W | |
| 刊名 | Solid State Communications
 |
| 2012 | |
| 卷号 | Vol.152 No.18页码:1753-1756 |
| 关键词 | SEMICONDUCTOR TRANSITION |
| ISSN号 | 0038-1098 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2158339 |
| 专题 | 安徽大学 |
| 作者单位 | 1.W Anhui Univ, Acad Mat & Chem, Anhui Prov Lab Biomimet Sensor & Detecting Techno, Luan 237012, Peoples R China 2.Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion SINANO, Nano Device & Mat Div, Suzhou 215123, Peoples R China 增强组织信息的名称 Chinese Academy of Sciences 3.Yunnan Univ, Dept Phys, Kunming 650091, Peoples R China 增强组织信息的名称 Yunnan University 4.Chinese Acad Sci, Inst Solid State Phys, Hefei 230031, Peoples R China 增强组织信息的名称 Chinese Academy of Sciences |
| 推荐引用方式 GB/T 7714 | Wei,XF,Li,LL,Liu,LW,et al. Two-colour mid-infrared absorption in InAs/GaSb type II and broken-gap quantum wells under gated electric field[J]. Solid State Communications,2012,Vol.152 No.18:1753-1756. |
| APA | Wei,XF,Li,LL,Liu,LW,&Xu,W.(2012).Two-colour mid-infrared absorption in InAs/GaSb type II and broken-gap quantum wells under gated electric field.Solid State Communications,Vol.152 No.18,1753-1756. |
| MLA | Wei,XF,et al."Two-colour mid-infrared absorption in InAs/GaSb type II and broken-gap quantum wells under gated electric field".Solid State Communications Vol.152 No.18(2012):1753-1756. |
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