| First-principles study on the minimization of over-erase phenomenon in Si3N4 trapping layer | |
| Wang Jia-Yu; Jiang Xian-Wei; Lu Wen-Juan; Dai Yue-Hua; Chen Zhen; Li Ning; Li Xiao-Feng; Jin Bo | |
| 刊名 | ACTA PHYSICA SINICA
 |
| 2015 | |
| 卷号 | Vol.64 No.13 |
| 关键词 | FLASH MEMORY NITRIDE |
| ISSN号 | 1000-3290 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2157552 |
| 专题 | 安徽大学 |
| 作者单位 | 1.Chinese Acad Sci, Hefei Inst Phys Sci, Internet Network Informat Ctr, Hefei 230031, Peoples R China 2.Anhui Univ, Inst Elect & Informat Engn, Hefei 230601, Peoples R China |
| 推荐引用方式 GB/T 7714 | Wang Jia-Yu,Jiang Xian-Wei,Lu Wen-Juan,et al. First-principles study on the minimization of over-erase phenomenon in Si3N4 trapping layer[J]. ACTA PHYSICA SINICA,2015,Vol.64 No.13. |
| APA | Wang Jia-Yu.,Jiang Xian-Wei.,Lu Wen-Juan.,Dai Yue-Hua.,Chen Zhen.,...&Jin Bo.(2015).First-principles study on the minimization of over-erase phenomenon in Si3N4 trapping layer.ACTA PHYSICA SINICA,Vol.64 No.13. |
| MLA | Wang Jia-Yu,et al."First-principles study on the minimization of over-erase phenomenon in Si3N4 trapping layer".ACTA PHYSICA SINICA Vol.64 No.13(2015). |
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