Pressure-induced enhancement of optoelectronic properties in PtS2 | |
Xin-Jian Li and Zhao-Rong Yang; Liang Li; Yi-Fang Yuan; Ying Zhou; Yong-Hui Zhou; Ran-Ran Zhang; Zhi-Tao Zhang; Chao An; Chuan-Chuan Gu; Xu-Liang Chen | |
刊名 | Chinese Physics B
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2018 | |
卷号 | Vol.27 No.6页码:066201 |
ISSN号 | 1674-1056 |
URL标识 | 查看原文 |
内容类型 | 期刊论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2156783 |
专题 | 安徽大学 |
作者单位 | 1.Anhui Provincial Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China 2.Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China 3.Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha 410081, China 4.Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China 5.State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology , Wuhan 430074, China |
推荐引用方式 GB/T 7714 | Xin-Jian Li and Zhao-Rong Yang,Liang Li,Yi-Fang Yuan,et al. Pressure-induced enhancement of optoelectronic properties in PtS2[J]. Chinese Physics B,2018,Vol.27 No.6:066201. |
APA | Xin-Jian Li and Zhao-Rong Yang.,Liang Li.,Yi-Fang Yuan.,Ying Zhou.,Yong-Hui Zhou.,...&Wei-Ke Wang.(2018).Pressure-induced enhancement of optoelectronic properties in PtS2.Chinese Physics B,Vol.27 No.6,066201. |
MLA | Xin-Jian Li and Zhao-Rong Yang,et al."Pressure-induced enhancement of optoelectronic properties in PtS2".Chinese Physics B Vol.27 No.6(2018):066201. |
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