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Pressure-induced enhancement of optoelectronic properties in PtS2
Xin-Jian Li and Zhao-Rong Yang; Liang Li; Yi-Fang Yuan; Ying Zhou; Yong-Hui Zhou; Ran-Ran Zhang; Zhi-Tao Zhang; Chao An; Chuan-Chuan Gu; Xu-Liang Chen
刊名Chinese Physics B
2018
卷号Vol.27 No.6页码:066201
ISSN号1674-1056
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/2156783
专题安徽大学
作者单位1.Anhui Provincial Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
2.Institute of Physical Science and Information Technology, Anhui University, Hefei 230601, China
3.Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha 410081, China
4.Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052, China
5.State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology , Wuhan 430074, China
推荐引用方式
GB/T 7714
Xin-Jian Li and Zhao-Rong Yang,Liang Li,Yi-Fang Yuan,et al. Pressure-induced enhancement of optoelectronic properties in PtS2[J]. Chinese Physics B,2018,Vol.27 No.6:066201.
APA Xin-Jian Li and Zhao-Rong Yang.,Liang Li.,Yi-Fang Yuan.,Ying Zhou.,Yong-Hui Zhou.,...&Wei-Ke Wang.(2018).Pressure-induced enhancement of optoelectronic properties in PtS2.Chinese Physics B,Vol.27 No.6,066201.
MLA Xin-Jian Li and Zhao-Rong Yang,et al."Pressure-induced enhancement of optoelectronic properties in PtS2".Chinese Physics B Vol.27 No.6(2018):066201.
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