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	The study about the resistive switching based on graphene/NiO interfaces
	Lu,Wenjuan; Wang,Feifei; Yang,Jin; Ma,Chengzhi; Dai,Yuehua; Zhang,Xu; Yang,Fei
刊名	AIP Advances
	2017
卷号	Vol.7 No.8页码:085308
关键词	NONVOLATILE MEMORY OXIDE ELECTRODES NANOWIRES DFTB RRAM
ISSN号	2158-3226
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2156557
专题	安徽大学
作者单位	1.Hefei Normal Univ, Sch Elect & Informat Engn, Hefei 230601, Anhui, Peoples R China 2.Anhui Univ, Sch Elect & Informat Engn, Hefei 230601, Anhui, Peoples R China
推荐引用方式 GB/T 7714	Lu,Wenjuan,Wang,Feifei,Yang,Jin,et al. The study about the resistive switching based on graphene/NiO interfaces[J]. AIP Advances,2017,Vol.7 No.8:085308.
APA	Lu,Wenjuan.,Wang,Feifei.,Yang,Jin.,Ma,Chengzhi.,Dai,Yuehua.,...&Yang,Fei.(2017).The study about the resistive switching based on graphene/NiO interfaces.AIP Advances,Vol.7 No.8,085308.
MLA	Lu,Wenjuan,et al."The study about the resistive switching based on graphene/NiO interfaces".AIP Advances Vol.7 No.8(2017):085308.

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