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	Nitrogen-concentration modulated interfacial and electrical properties of sputtering-derived HfGdON gate dielectric
	Shang,Guoliang; Zhang,Lide; Liu,Mao; Ma,Rui; He,Gang; Fang,Ming; Fei,Guangtao
刊名	Journal of Applied Physics
	2016
卷号	Vol.119 No.21页码:214103
关键词	THERMAL-STABILITY FILMS PHOTOEMISSION GD
ISSN号	0021-8979;1089-7550
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2156258
专题	安徽大学
作者单位	1.Chinese Acad Sci, Inst Solid State Phys, Anhui Key Lab Nanomat & Nanostruct, Hefei 230031, Peoples R China 2.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Peoples R China 3.Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Peoples R China
推荐引用方式 GB/T 7714	Shang,Guoliang,Zhang,Lide,Liu,Mao,et al. Nitrogen-concentration modulated interfacial and electrical properties of sputtering-derived HfGdON gate dielectric[J]. Journal of Applied Physics,2016,Vol.119 No.21:214103.
APA	Shang,Guoliang.,Zhang,Lide.,Liu,Mao.,Ma,Rui.,He,Gang.,...&Fei,Guangtao.(2016).Nitrogen-concentration modulated interfacial and electrical properties of sputtering-derived HfGdON gate dielectric.Journal of Applied Physics,Vol.119 No.21,214103.
MLA	Shang,Guoliang,et al."Nitrogen-concentration modulated interfacial and electrical properties of sputtering-derived HfGdON gate dielectric".Journal of Applied Physics Vol.119 No.21(2016):214103.

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