| Organic Programmable Resistance Memory Device Based on Au/Alq(3)/gold-nanoparticle/Alq(3)/Al Structure | |
| Ji,ZY; Wang,H; Shang,LW; Liu,M; Lu,CY; Chen,YP; Han,MX; Chen,JN; Liu,X | |
| 刊名 | IEEE Electron Device Letters
 |
| 2011 | |
| 卷号 | Vol.32 No.8页码:1140-1142 |
| 关键词 | BISTABLE MEMORY BISTABILITY TRANSISTORS MECHANISM CIRCUITS FILMS |
| ISSN号 | 0741-3106 |
| URL标识 | 查看原文 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/2155060 |
| 专题 | 安徽大学 |
| 作者单位 | 1.Anhui Univ, Coll Elect & Technol, Hefei 230039, Peoples R China 增强组织信息的名称 Anhui University 2.Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China 增强组织信息的名称 Institute of Microelectronics, CAS Chinese Academy of Sciences |
| 推荐引用方式 GB/T 7714 | Ji,ZY,Wang,H,Shang,LW,et al. Organic Programmable Resistance Memory Device Based on Au/Alq(3)/gold-nanoparticle/Alq(3)/Al Structure[J]. IEEE Electron Device Letters,2011,Vol.32 No.8:1140-1142. |
| APA | Ji,ZY.,Wang,H.,Shang,LW.,Liu,M.,Lu,CY.,...&Liu,X.(2011).Organic Programmable Resistance Memory Device Based on Au/Alq(3)/gold-nanoparticle/Alq(3)/Al Structure.IEEE Electron Device Letters,Vol.32 No.8,1140-1142. |
| MLA | Ji,ZY,et al."Organic Programmable Resistance Memory Device Based on Au/Alq(3)/gold-nanoparticle/Alq(3)/Al Structure".IEEE Electron Device Letters Vol.32 No.8(2011):1140-1142. |
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