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	Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics
	Liang, S.; Jiang, S. S.; Sun, Z. Q.; He, G.; Zhu, L.; Li, W. D.; Liu, M.
刊名	Journal of Sol-Gel Science and Technology
	2017
卷号	Vol.83 No.3页码:675-682
关键词	ATOMIC LAYER DEPOSITION OXIDE THIN-FILMS INTERFACIAL PROPERTIES PLASMA-OXIDATION HFO2 TRANSISTORS MODULATION SILICON TIO2 ALD
ISSN号	0928-0707;1573-4846
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/2154614
专题	安徽大学
作者单位	1.Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Anhui Key Lab Nanomat & Nanostruct, Hefei 230031, Peoples R China 2.Anhui Univ, Sch Phys & Mat Sci, Radiat Detect Mat & Devices Lab, Hefei 230601, Anhui, Peoples R China
推荐引用方式 GB/T 7714	Liang, S.,Jiang, S. S.,Sun, Z. Q.,et al. Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics[J]. Journal of Sol-Gel Science and Technology,2017,Vol.83 No.3:675-682.
APA	Liang, S..,Jiang, S. S..,Sun, Z. Q..,He, G..,Zhu, L..,...&Liu, M..(2017).Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics.Journal of Sol-Gel Science and Technology,Vol.83 No.3,675-682.
MLA	Liang, S.,et al."Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics".Journal of Sol-Gel Science and Technology Vol.83 No.3(2017):675-682.

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