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	Degradation model of the electron gate current in PMOSFET (EI收录)
	Tang, Yusheng[1]; Hao, Yue[2]; Zhu, Jiangang[2]; Zhang, Jincheng[2]
会议名称	2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
会议日期	October 22, 2001 - October 25, 2001
会议地点	Shanghai, China
URL标识	查看原文
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/2141420
专题	华南理工大学
作者单位	1.[1] Microelectronic Technique Center, Shanghai Jiao Tong University, 535 Fahuazhen Road, Shanghai 2.200052, China 3.[2] Microelectronics Institute, Xi'an Electron Science and Technique University, 2 Taibai Road, Xi'an 4.710071, China
推荐引用方式 GB/T 7714	Tang, Yusheng[1],Hao, Yue[2],Zhu, Jiangang[2],等. Degradation model of the electron gate current in PMOSFET (EI收录)[C]. 见:2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. Shanghai, China. October 22, 2001 - October 25, 2001.

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