Degradation model of the electron gate current in PMOSFET (EI收录) | |
Tang, Yusheng[1]; Hao, Yue[2]; Zhu, Jiangang[2]; Zhang, Jincheng[2] | |
会议名称 | 2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings |
会议日期 | October 22, 2001 - October 25, 2001 |
会议地点 | Shanghai, China |
URL标识 | 查看原文 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2141420 |
专题 | 华南理工大学 |
作者单位 | 1.[1] Microelectronic Technique Center, Shanghai Jiao Tong University, 535 Fahuazhen Road, Shanghai 2.200052, China 3.[2] Microelectronics Institute, Xi'an Electron Science and Technique University, 2 Taibai Road, Xi'an 4.710071, China |
推荐引用方式 GB/T 7714 | Tang, Yusheng[1],Hao, Yue[2],Zhu, Jiangang[2],等. Degradation model of the electron gate current in PMOSFET (EI收录)[C]. 见:2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings. Shanghai, China. October 22, 2001 - October 25, 2001. |
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