High-current injection in Spreading-Resistance Temperature sensor on SOI (EI收录) | |
Wu, Z.H.[1]; Lai, P.T.[1]; Li, Bin[2]; Sin, J.K.O.[3] | |
会议名称 | Proceedings of the IEEE Hong Kong Electron Devices Meeting |
会议日期 | June 22, 2002 |
会议地点 | Hong Kong, China |
关键词 | Doping (additives) Electric conductivity Electron devices Physics Semiconductor doping Silicon Silicon compounds Temperature sensors Thick films Thin films |
URL标识 | 查看原文 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/2141134 |
专题 | 华南理工大学 |
作者单位 | 1.[1] Department of Electrical and Electronic Engineering, University of Hong Kong, Hong Kong 2.[2] Department of Applied Physics, South China University of Technology, Guangzhou, China 3.[3] Department of Electrical and Electronic Engineering, Hong Kong University of Science and Technology, Hong Kong |
推荐引用方式 GB/T 7714 | Wu, Z.H.[1],Lai, P.T.[1],Li, Bin[2],等. High-current injection in Spreading-Resistance Temperature sensor on SOI (EI收录)[C]. 见:Proceedings of the IEEE Hong Kong Electron Devices Meeting. Hong Kong, China. June 22, 2002. |
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